scholarly journals Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 281 ◽  
Author(s):  
Zeming Li ◽  
Teng Jiao ◽  
Daqiang Hu ◽  
Yuanjie Lv ◽  
Wancheng Li ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Initial Stage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

β-Ga2O3 films were grown on sapphire (0001) substrates with various O/Ga (VI/III) ratios by metal organic chemical vapor deposition. The effects of VI/III ratio on growth rate, structural, morphological, and Raman properties of the films were systematically studied. By varying the VI/III ratio, the crystalline quality obviously changed. By decreasing the VI/III ratio from 66.9 × 103 to 11.2 × 103, the crystalline quality improved gradually, which was attributed to low nuclei density in the initial stage. However, crystalline quality degraded with further decrease of the VI/III ratio, which was attributed to excessive nucleation rate.

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jung Hun Jang ◽  
A M Herrero ◽  
Seungyoung Son ◽  
B Gila ◽  
C Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN layers were grown on c-plane sapphire substrates by using a conventional two step growth method via metal organic chemical vapor deposition (MOCVD). The effect of different growth conditions used in the deposition of the low temperature nucleation layer and high temperature islands on the crystalline quality of the GaN layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The polar (tilt) and azimuthal (twist) spread were estimated from the full width at half maximum (FWHM) values of the omega rocking curves (¥ø-RCs) recorded from the planes parallel and perpendicular to the sample surface. It was found from the XRD and TEM study that the edge and mixed type threading dislocations are dominant defects so that the relevant figure of merit (FOM) for the crystalline quality should be considered only by the FWHM value of ¥ø-RC of the surface perpendicular plane. The result showed that the mixed- and edge-types dislocations were strongly associated with the growth conditions used in the deposition of the nucleation layer and high temperature islands.

Effects of Surface Treatment and Annealing on Properties of InN Layers Grown Using Metal Organic Chemical Vapor Deposition

2012 ◽  
Vol 271-272 ◽  
pp. 190-196
Author(s):  
Sheng Po Chang ◽  
Kuan Jen Chen ◽  
Po Jui Kuo ◽  
Yu Zung Chiou
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Surface Treatment ◽  
Vapor Deposition ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We report the effects surface treatment and annealing had on the properties of InN layers grown using metal organic chemical vapor deposition (MOCVD). The number of defects due to N vacancies decreased significantly with increasing annealing temperature. However, when the annealing temperature reached 700°C, the crystalline grain became larger on the film surfaces. Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films. However, when the annealing temperature was too high, InN oxidized and even dissociated.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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