scholarly journals High Homogeneity of Magnesium Doped LiNbO3 Crystals Grown by Bridgman Method

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 71
Author(s):  
Xiaodong Yan ◽  
Tian Tian ◽  
Menghui Wang ◽  
Hui Shen ◽  
Ding Zhou ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Bridgman Method ◽  
Refractive Index Gradient ◽  
High Crystalline Quality ◽  
Wet Chemistry ◽  
X Ray ◽  
Vertical Bridgman ◽  
Extraordinary Refractive Index ◽  
Index Gradient ◽  
Mg Doped

A series of LiNbO3 crystals doped with various MgO concentrations (0, 3%, and 5 mol%) was simultaneously grown in one furnace by the modified vertical Bridgman method. The wet chemistry method was used to prepare the polycrystalline powders, and the growth conditions were optimized. The full width at half maximum of high-resolution X-ray rocking curves for (001) reflection of 5 mol% Mg doped lithium niobate (LN) crystal was about 8″, which meant it possessed high crystalline quality. The OH− absorption spectra shifted to 3534.7 cm−1, and the UV absorption edge violet shift indicated that 5 mol% MgO successfully doped in LN and exceeded the threshold. The extraordinary refractive index gradient of 5 mol% Mg doped LN crystal was as small as 2.5 × 10−5/cm, which exhibited high optical homogeneity.

Thermoelectric Properties of Pb1-xCdxSe Crystals Grown by Vertical Bridgman Method

2012 ◽  
Vol 194 ◽  
pp. 148-152
Author(s):  
Horng Jyh Gau ◽  
Yih Jye Chiou ◽  
Ching Cherng Wu ◽  
Yung Kang Kuo ◽  
Ching Hwa Ho
Keyword(s):  
Figure Of Merit ◽  
Carrier Transport ◽  
Sem Analysis ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Temperature Dependences ◽  
Type Semiconductor ◽  
Vertical Bridgman

Single crystals of Pb1-xCdxSe compounds with x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, SEM and electron-probe microanalysis (EPMA). The thermoelectric behaviors for the Pb1-xCdxSe crystals were studied by means of thermal and carrier transport measurements in the temperature range between 50K and 400K. X-ray diffraction and SEM analysis confirmed that as-grown Pb1-xCdxSe crystals are simgle phase. The experimental results showed that the PbTe sample is p-type semiconductor but Pb1-xCdxSe samples with x = 0.01, 0.03, 0.05, 0.07 and 0.1 are n-type semiconductors. Temperature dependences of resistivity, Seebeck coefficient, and thermal conductivity for the various compositions of Pb1-xCdxSe were analyzed. The dimensionless thermoelectric figure of merit ZT for these compounds was evaluated and discussed. It was found that Pb0.95Cd0.05Se exhibits the best thermoelectric performance. The maximum figure of merit (ZT) of Pb0.95Cd0.05Se is about 0.47 at 290 K.

Crystal growth of CuInSe2 by the Bridgman method

1989 ◽  
Vol 67 (4) ◽  
pp. 294-297 ◽  
Author(s):  
W. S. Weng ◽  
L. S. Yip ◽  
I. Shih ◽  
C. H. Champness
Keyword(s):  
Crystal Growth ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Hall Effect Measurements ◽  
Rotation Technique ◽  
Crucible Rotation

Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

Reconstruction of the refractive index gradient by x-ray diffraction enhanced computed tomography

2006 ◽  
Vol 51 (14) ◽  
pp. 3391-3396 ◽  
Author(s):  
Junyue Wang ◽  
Peiping Zhu ◽  
Qingxi Yuan ◽  
Wanxia Huang ◽  
Hang Shu ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Refractive Index ◽  
Refractive Index Gradient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Index Gradient ◽  
Enhanced Computed Tomography

CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method

2007 ◽  
Author(s):  
M. Pavesi ◽  
M. Zanichelli ◽  
E. Gombia ◽  
R. Mosca ◽  
L. Marchini ◽  
...  
Keyword(s):  
Bridgman Method ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

CdTe detectors responses to pulsed X-rays : comparison of different materials

1993 ◽  
Vol 302 ◽  
Author(s):  
L. Verger ◽  
M. Cuzin ◽  
F. Glasser ◽  
J. Lajzerowicz ◽  
F. Mathy ◽  
...  
Keyword(s):  
High Pressure ◽  
Dynamic Range ◽  
Transient Behavior ◽  
Bridgman Method ◽  
X Rays ◽  
Transient Responses ◽  
X Ray ◽  
Energy Beam ◽  
Photoconductive Detectors ◽  
Vertical Bridgman

ABSTRACTThe goal of this work is to compare and analyze the transient responses to X-ray pulses of different cadmium telluride detectors:- CdTe: Cl grown by the vertical Bridgman method (B.).- CdTe: Cl grown by the Travelling Heater Method (T.H.M.).- Cd0,8 Zn0,2 Te grown by the High Pressure Bridgman method (H.P.B.).Photoconductive detectors were subjected to very short (20 ns) 100 keV X-ray pulses and short (4 µs) 2 MeV pulses. The transient response of the photoconductors CdTe: Cl and CdZnTe under high X-ray energy beam were characterized in terms of sensitivity, linearity and dynamic range vs different parameters such as bias voltage and X-ray beam fluence. Bridgman and T.H.M. detectors show similar behaviors while H.P.B. detectors which are highly resistance show shorter transient behavior after the 20 ns pulses irradiations and larger afterglow after the 4 µs pulses irradiations.

Single and Double Variant Cupt-B Ordered GalnAs

1999 ◽  
Vol 583 ◽  
Author(s):  
R. L. Forrest ◽  
E. D. Meserole ◽  
R. T. Nielsen ◽  
M. S. Goorsky ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Order Parameter ◽  
Growth Conditions ◽  
Semiconductor Heterostructures ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inp Substrates ◽  
Lattice Matched

AbstractNominally lattice-matched GaInAs layers grown by metal organic vapor phase epitaxy on InP substrates have been studied using high-resolution x-ray diffraction (HRXRD) to determine the growth conditions under which ordering is introduced. HRXRD provides an independent means to quantify the order parameter of semiconductor heterostructures as well as the ordering on different {111} planes, i.e., double variant ordering. This independent means to determine ordering provides for a better understanding of the effects of ordering on the electronic and optical properties. Double variant ordering was observed for epitaxial layers grown on exact (001) InP substrates, with an order parameter of about 0.1 in both variants. For substrates that were miscut by 6 degrees, single variant ordering was detected. In these cases, an order parameter as high as 0.66 was measured for certain growth conditions. The layers grown on vicinal substrates are all of high crystalline quality, those on (001) substrates exhibit some mosaic spread.

Microstructure and Electrical Characterization of In-Doped Cd0.9Mn0.1Te Crystal Grown by the Vertical Bridgman Method

2013 ◽  
Vol 295-298 ◽  
pp. 322-325
Author(s):  
Zhen Wen Yuan ◽  
Lin Jun Wang ◽  
Ji Jun Zhang ◽  
Gao Li Wei ◽  
Kai Feng Qin ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Electrical Characterization ◽  
Compositional Analysis ◽  
Bridgman Method ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Ir Transmission ◽  
Te Inclusions ◽  
Vertical Bridgman

CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm.

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