scholarly journals The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Wen-Chieh Ho ◽  
Yao-Hsing Liu ◽  
Wen-Hsuan Wu ◽  
Sung-Wen Huang Chen ◽  
Jerry Tzou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Structural Optimization ◽  
Breakdown Voltage ◽  
Device Performance ◽  
Free Standing ◽  
High Crystalline Quality ◽  
Mesa Structure ◽  
High Breakdown Voltage ◽  
Structure Improvement

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

2020 ◽  
Vol 41 (1) ◽  
pp. 123-126 ◽  
Author(s):  
Hiroshi Ohta ◽  
Naomi Asai ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Mesa Structure ◽  
High Breakdown Voltage

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

2013 ◽  
Vol 52 (2R) ◽  
pp. 028007 ◽  
Author(s):  
Yoshitomo Hatakeyama ◽  
Kazuki Nomoto ◽  
Akihisa Terano ◽  
Naoki Kaneda ◽  
Tadayoshi Tsuchiya ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Free Standing ◽  
Field Plate ◽  
High Breakdown Voltage ◽  
Damage Field

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

2013 ◽  
Vol 740-742 ◽  
pp. 974-977 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Contact Area ◽  
Electric Field Distribution ◽  
Current Gain ◽  
High Current ◽  
High Breakdown Voltage ◽  
Base Contact

Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

2008 ◽  
Vol 600-603 ◽  
pp. 995-998 ◽  
Author(s):  
Toru Hiyoshi ◽  
Tsutomu Hori ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Device Simulation ◽  
Side Wall ◽  
Experimental Results ◽  
Pin Diode ◽  
Pin Diodes ◽  
Vertical Side ◽  
Mesa Structure ◽  
Rounded Corner

A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical side-wall at the edge of pn junction and rounded corner at mesa bottom, has been formed by reactive ion etching (RIE). The junction termination extension (JTE) region has been optimized by device simulation, and simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been discussed.

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage

2012 ◽  
Vol 717-720 ◽  
pp. 1299-1302
Author(s):  
Kazuki Nomoto ◽  
Tohru Nakamura ◽  
Naoki Kaneda ◽  
Toshihiro Kawano ◽  
Tadayoshi Tsuchiya ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Free Standing ◽  
High Breakdown Voltage ◽  
Device Processing ◽  
Device Size

This report describes the first to fabricate GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage were 124 mΩ•cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of our material and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET

2018 ◽  
Vol 924 ◽  
pp. 778-781
Author(s):  
Kohei Ebihara ◽  
Koutarou Kawahara ◽  
Shiro Hino ◽  
Koji Sadamatsu ◽  
Akemi Nagae ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Light Emission ◽  
Avalanche Breakdown ◽  
Power Devices ◽  
Trade Off ◽  
Edge Termination ◽  
High Breakdown Voltage

High breakdown voltage and smaller size of edge termination are required in SiC power devices. We simulated reverse bias characteristics of a variety of edge terminations targeting 6.5 kV MOSFET and the FLR showed the best trade-off between the size and the implanted Al dose. Fabricated pn diode TEGs with a FLR demonstrated over 6.5 kV breakdown voltage. We observed the avalanche breakdown visually by light emission and it corresponded to the simulated electric field. These indicate that we can fabricate the desirable FLR for 6.5 kV MOSFET.

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