scholarly journals High Thermal Stability of κ-Ga2O3 Grown by MOCVD

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 446
Author(s):  
Junhee Lee ◽  
Honghyuk Kim ◽  
Lakshay Gautam ◽  
Manijeh Razeghi
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Gallium Oxide ◽  
Chemical Vapor ◽  
High Thermal Stability ◽  
Organic Chemical ◽  
High Electrical Resistivity ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Thermal Stability Of

We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high temperature. Here, we show the kappa gallium oxide whose phase is stable in a high temperature annealing process at 1000 °C. These oxide films were grown at 690 °C under nitrogen carrier gas. The materials showed high electrical resistivity when doped with silicon, whereas the film conductivity was significantly improved when doped with both indium and silicon. This work provides a pathway to overcoming limitations for the advance in utilizing kappa gallium oxide possessing superior electrical characteristics.

Thermal Stability of HfO2Films Fabricated by Metal Organic Chemical Vapor Deposition

2008 ◽  
Vol 47 (1) ◽  
pp. 31-34 ◽  
Author(s):  
Yoshitaka Nagasato ◽  
Yoshitaka Iwazaki ◽  
Masahiko Hasumi ◽  
Tomo Ueno ◽  
Koichi Kuroiwa
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Thermal Stability Of

Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Introducing Voids around the Interlayer of AlN by High Temperature Annealing

2021 ◽  
Author(s):  
Jianwei Ben ◽  
Jiangliu Luo ◽  
Zhichen Lin ◽  
Xiaojuan Sun ◽  
Xinke Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Temperature Annealing ◽  
Simple Method ◽  
Metal Organic ◽  
Interlayer Structure ◽  
Organic Chemical Vapor Deposition

Abstract To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.

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