scholarly journals Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 489
Author(s):  
Yeo-Jin Choi ◽  
Jae-Hoon Lee ◽  
Jin-Seok Choi ◽  
Sung-Jin An ◽  
Young-Min Hwang ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Surface Passivation ◽  
Drain Current ◽  
Trap Density ◽  
Frequency Noise ◽  
High Electron ◽  
Silicon Carbon ◽  
Cap Layer ◽  
Silicon Carbon Nitride

We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited enhanced drain current, reduced gate leakage current, low interface trap density (Dit), and high on/off ratio thanks to the passivation effect, compared to the device without SiCN cap layer. Both devices clearly showed 1/f noise behavior with carrier number fluctuations (CNF), regardless of the existence of SiCN cap layer. The proposed device presented the relative low trap density (Nit) and reduced access noise due to the effective surface passivation in source-drain access region compared to the device without SiCN cap layer. From the improved DC, C-V and noise results of the proposed device, the in situ SiCN cap layer plays an important role in the passivation layer and gate oxide layer in AlGaN/GaN HEMT.

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Hard plasma chemical coatings based on silicon carbon nitride

2007 ◽  
Vol 46 (11-12) ◽  
pp. 543-549 ◽  
Author(s):  
L. A. Ivashchenko ◽  
V. I. Ivashchenko ◽  
O. K. Porada ◽  
S. M. Dub ◽  
P. L. Skrinskii ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Chemical ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

2015 ◽  
Vol 339 ◽  
pp. 102-108 ◽  
Author(s):  
Evgeniya Ermakova ◽  
Yurii Rumyantsev ◽  
Artur Shugurov ◽  
Alexey Panin ◽  
Marina Kosinova
Keyword(s):  
Mechanical Properties ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Optical And Mechanical Properties ◽  
Silicon Carbon Nitride

Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

2017 ◽  
Vol 33 (1-2) ◽  
pp. 44
Author(s):  
P. Kouakou ◽  
P. Yoboue ◽  
B. Ouattara ◽  
V. Hody ◽  
P. Choquet ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Mechanical Characterisation ◽  
Silicon Carbon ◽  
Film Adhesion ◽  
Experimental Parameters ◽  
Nitrogen Percentage ◽  
Silicon Carbon Nitride

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N<sub>2</sub> gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

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