Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Keyword(s):
Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H2 as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H2 pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out.
2019 ◽
Vol 58
(SC)
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pp. SC1042
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2000 ◽
Vol 159-160
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pp. 398-404
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2012 ◽
Vol 338
(1)
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pp. 47-51
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2004 ◽
Keyword(s):
2012 ◽
Vol 51
(1R)
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pp. 015501
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2000 ◽
Vol 5
(S1)
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pp. 230-237
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2004 ◽
Vol 43
(2)
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pp. 534-535
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