scholarly journals Effect of Substrate Orientation on the Growth Rate, Surface Morphology and Silicon Incorporation on GaSb Grown by Metal-Organic Vapor Phase Epitaxy

2004 ◽  
Author(s):  
Jian Yu ◽  
Ishwara B. Bhat
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Substrate Orientation ◽  
Organic Vapor ◽  
Metal Organic

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate

2019 ◽  
Vol 25 (8) ◽  
pp. 507-512 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Satoshi Yasukochi ◽  
Tomonari Shioda ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Reaction Kinetics ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multi Scale ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetics Of

High growth rate metal organic vapor phase epitaxy GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3950-3952 ◽  
Author(s):  
Koh Matsumoto ◽  
Hiroki Tokunaga ◽  
Akinori Ubukata ◽  
Kazumasa Ikenaga ◽  
Yasushi Fukuda ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films

Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1182
Author(s):  
Nirupam Hatui ◽  
Athith Krishna ◽  
Shubhra S. Pasayat ◽  
Stacia Keller ◽  
Umesh K. Mishra
Keyword(s):  
Surface Morphology ◽  
Parameter Space ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Pulse Time ◽  
Organic Vapor ◽  
Good Surface ◽  
Metal Organic

Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H2 as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H2 pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out.

GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

2007 ◽  
Vol 46 (No. 43) ◽  
pp. L1045-L1047 ◽  
Author(s):  
Tomonari Shioda ◽  
Yuki Tomita ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Diffusion Model ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Rate Enhancement ◽  
Phase Diffusion ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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