scholarly journals Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1899
Author(s):  
Yejoo Choi ◽  
Jinwoong Lee ◽  
Jaehyuk Lim ◽  
Seungjun Moon ◽  
Changhwan Shin
Keyword(s):  
Work Function ◽  
Device Performance ◽  
Negative Capacitance ◽  
Line Edge Roughness ◽  
Random Dopant Fluctuation ◽  
Edge Roughness ◽  
The Impact ◽  
Random Dopant

In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt], σ[SS], σ[Ion/Ioff], σ[Vt]/µ[Vt], σ[SS]/µ[SS], and σ[Ion/Ioff]/µ[Ion/Ioff], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.

Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS

2019 ◽  
Vol 19 (01) ◽  
pp. 2050002
Author(s):  
W. F. Lü ◽  
L. Dai ◽  
Z. F. Zhao ◽  
M. Lin
Keyword(s):  
Performance Improvement ◽  
Decisive Role ◽  
Feedback Mechanism ◽  
Negative Capacitance ◽  
Performance Parameters ◽  
Performance Improvements ◽  
Random Dopant Fluctuation ◽  
Statistical Variations ◽  
The Impact ◽  
Random Dopant

In this paper, we investigate the impact of random dopant fluctuation (RDF) on the statistical variations in negative capacitance MOSFETs (NCFETs) through a device simulation coupled with the Landau–Khalatnikov (LK) equation. Compact models for feedback mechanisms that are based on the internal gate voltage amplification in NCFETs are proposed. The results show that internal voltage amplification plays a decisive role in performance improvement of device variability. Further, our simulation study demonstrates that owing to the feedback mechanism, the dispersions of the performance parameters in NCFETs exhibit different statistical distribution characteristics compared to their MOSFET counterparts. Our study may provide further insight regarding device and/or circuit designs utilizing NCFETs.

scholarly journals Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

2015 ◽  
Vol 5 (2) ◽  
pp. 101-115 ◽  
Author(s):  
Yin-Nien Chen ◽  
Chien-Ju Chen ◽  
Ming-Long Fan ◽  
Vita Hu ◽  
Pin Su ◽  
...  
Keyword(s):  
Work Function ◽  
Line Edge Roughness ◽  
Edge Roughness

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

2014 ◽  
Vol 61 (2) ◽  
pp. 466-472 ◽  
Author(s):  
Natalia Seoane ◽  
Guillermo Indalecio ◽  
Enrique Comesana ◽  
Manuel Aldegunde ◽  
Antonio J. Garcia-Loureiro ◽  
...  
Keyword(s):  
Line Edge Roughness ◽  
Edge Roughness ◽  
Random Dopant

scholarly journals Characteristic diffuse scattering from distinct line roughnesses

2017 ◽  
Vol 50 (6) ◽  
pp. 1766-1772 ◽  
Author(s):  
Analía Fernández Herrero ◽  
Mika Pflüger ◽  
Jürgen Probst ◽  
Frank Scholze ◽  
Victor Soltwisch
Keyword(s):  
Extreme Ultraviolet ◽  
Structural Elements ◽  
Line Edge Roughness ◽  
Optical Elements ◽  
Angle Scattering ◽  
Edge Roughness ◽  
Angular Scattering ◽  
The Impact

Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic manufacturing process, a rapid in-line characterization of nanostructures is indispensable. Numerous studies on the determination of regular geometry parameters of lamellar gratings from optical and extreme ultraviolet (EUV) scattering highlight the impact of roughness on the optical performance as well as on the reconstruction of these structures. Thus, a set of nine lamellar Si gratings with a well defined line edge roughness or line width roughness were designed. The investigation of these structures using EUV small-angle scattering reveals a strong correlation between the type of line roughness and the angular scattering distribution. These distinct scattering patterns open new paths for the unequivocal characterization of such structures by EUV scatterometry.

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