scholarly journals 40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 297 ◽  
Author(s):  
Truong Nga ◽  
DongSoo Lee ◽  
SungJin Kim ◽  
Minjae Lee ◽  
KeumCheol Hwang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
The Body ◽  
Cmos Process ◽  
Matching Network ◽  
High Isolation ◽  
High Q ◽  
Low Insertion Loss ◽  
Active Matching ◽  
Shunt Capacitors ◽  
On Chip

In the IoT/wearable devices, the antenna is shared with the receiver and transmitter of the transceiver. This requires the control of the switch between the antenna and the control circuitry to achieve both low insertion loss and high isolation. This paper presents a low insertion loss and high isolation switch based on Single Pole Double Throw (SPDT) switch for 2.4 GHz Bluetooth low power (BLE) transceiver. The body-floating technique is used to improve the insertion loss’s performance. An ultra-small on-chip matching network with high Q-factor is proposed. The shunt transistors are used as active shunt capacitors that create the active matching network to improve isolation characteristics. The proposed SDPT switch was designed using 55 nm CMOS process with the total area of 110 μm × 210 μm. The insertion loss and isolation characteristics of the proposed SPDT switch observed at 2.4 GHz are 1.85 dB and 40 dB, respectively.

scholarly journals Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver

2016 ◽  
Vol 88 (2) ◽  
pp. 1089-1098 ◽  
Author(s):  
Mohammad A.S. Bhuiyan ◽  
Yeoh Zijie ◽  
Jae S. Yu ◽  
Mamun B.I. Reaz ◽  
Noorfazila Kamal ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Active Inductor ◽  
Cmos Process ◽  
Rf Transceiver ◽  
Trade Off ◽  
High Isolation ◽  
Rf Transceivers ◽  
Low Insertion Loss ◽  
Parallel Resonance

Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

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