scholarly journals Measurement and Modelling of Leakage Current Behaviour in ZnO Surge Arresters under Various Applied Voltage Amplitudes and Pollution Conditions

Energies ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 875 ◽  
Author(s):  
Nurul Latiff ◽  
Hazlee Illias ◽  
Ab Bakar ◽  
Sameh Dabbak
Keyword(s):  
Leakage Current ◽  
Applied Voltage ◽  
Surge Arresters ◽  
Current Behaviour

scholarly journals Extracting the Resistive Current Component from a Surge Arrester’s Leakage Current without Voltage Reference

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1257
Author(s):  
Vid Vončina ◽  
Jože Pihler ◽  
Miro Milanovič
Keyword(s):  
Leakage Current ◽  
Data Transfer ◽  
Electronic Device ◽  
Theoretical Background ◽  
Voltage Reference ◽  
Current Component ◽  
Surge Arresters ◽  
Transfer Unit ◽  
Control Centre ◽  
Resistive Component

This article presents the development of the theoretical background and the design of an electronic device for monitoring the condition of a gapless Metal Oxide Surge Arrester (MOSA). The device is intended to be used online. Because of the inaccessibility and possible remote location of most surge arresters, it is equipped with a communication system, allowing for the device to convey the measurement of the surge arrester characteristics under any conditions. It is possible to determine the condition of the MOSA by gathering measurements of the surge arrester’s resistive component of leakage current. The leakage current information is sent via data transfer unit to a server and, after interpretation, will be forwarded to the authorised personnel through the surge arrester control centre.

scholarly journals Artificial Neural Network Application for Thermal Image Based Condition Monitoring of Zinc Oxide Surge Arresters

2017 ◽  
Vol 7 (3) ◽  
pp. 593
Author(s):  
Novizon Novizon ◽  
Zulkurnain Abdul-Malek ◽  
Aulia Aulia
Keyword(s):  
Neural Network ◽  
Artificial Neural Network ◽  
Leakage Current ◽  
Thermal Image ◽  
Histogram Method ◽  
Good Tool ◽  
Third Harmonic ◽  
Surge Arresters ◽  
Long Time ◽  
Artificial Neural

<p>Manual analysis of thermal image for detecting defects and classifying of condition of surge arrester take a long time. Artificial neural network is good tool for predict and classify data. This study applied neural network for classify the degree of degradation of surge arrester. Thermal image as input of neural network was segmented using Otsu’s segmentation and histogram method to get features of thermal image. Leakage current as a target of supervise neural network was extracted and applied Fast Fourier Transform to get third harmonic of resistive leakage current. The classification results meet satisfaction with error about 3%.</p>

Study of Dielectric and Electrical Properties of Nanostructured ZnO/MgO Films via Chemical Bath Deposition Techniques

2013 ◽  
Vol 832 ◽  
pp. 522-526
Author(s):  
Habibah Zulkefle ◽  
Mohammad Syafiq Rashidi ◽  
Firdaus Che Mat ◽  
Lyly Nyl Ismail ◽  
Raudah Abu Bakar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Immersion Time ◽  
Carrier Mobility ◽  
Deposition Time ◽  
Research Work ◽  
Immersion Method ◽  
High Frequency Region ◽  
Deposition Techniques ◽  
Current Behaviour

This research work focuses on the synthesis and deposition of nanostructured ZnO/MgO using immersion method where the influence of deposition time had been investigated. The deposition time was varied by controlling the immersion time at 2, 4, 6 and 8 hrs respectively. Electrical properties obtained revealed that the resistivity values varied from 12.5 to 20.0 kΩ.cm which due to the changes in carrier mobility and scattering. It being found that, the leakage current behaviour shows good in dielectric properties where the J values obtained was below than 1E-8 A.cm-2. Some surface modification observed as the immersion time increased from 2 to 8 hrs which also reflects to the variation in resistivity, leakage current and k values obtained. The formation of flakes like structure was observed for films with 4 hrs immersion time which resulted in the enhancement in k values at high frequency region.

Diagnostic of silicon carbide surge arresters using leakage current measurements

2011 ◽  
Vol 9 (5) ◽  
pp. 761-766 ◽  
Author(s):  
Arnaldo Gakiya Kanashiro ◽  
Milton Zanotti ◽  
Paulo Futoshi Obase ◽  
Wilson Roberto Bacega
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Surge Arresters

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

2016 ◽  
Vol 858 ◽  
pp. 405-409 ◽  
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Roozbeh Bonyadi ◽  
Vishal Ajit Shah ◽  
C.A. Fisher ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Turn On ◽  
State Behaviour ◽  
P Type ◽  
Soft Breakdown ◽  
Current Behaviour

In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 108 times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.

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