Study of Dielectric and Electrical Properties of Nanostructured ZnO/MgO Films via Chemical Bath Deposition Techniques

2013 ◽  
Vol 832 ◽  
pp. 522-526
Author(s):  
Habibah Zulkefle ◽  
Mohammad Syafiq Rashidi ◽  
Firdaus Che Mat ◽  
Lyly Nyl Ismail ◽  
Raudah Abu Bakar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Immersion Time ◽  
Carrier Mobility ◽  
Deposition Time ◽  
Research Work ◽  
Immersion Method ◽  
High Frequency Region ◽  
Deposition Techniques ◽  
Current Behaviour

This research work focuses on the synthesis and deposition of nanostructured ZnO/MgO using immersion method where the influence of deposition time had been investigated. The deposition time was varied by controlling the immersion time at 2, 4, 6 and 8 hrs respectively. Electrical properties obtained revealed that the resistivity values varied from 12.5 to 20.0 kΩ.cm which due to the changes in carrier mobility and scattering. It being found that, the leakage current behaviour shows good in dielectric properties where the J values obtained was below than 1E-8 A.cm-2. Some surface modification observed as the immersion time increased from 2 to 8 hrs which also reflects to the variation in resistivity, leakage current and k values obtained. The formation of flakes like structure was observed for films with 4 hrs immersion time which resulted in the enhancement in k values at high frequency region.

The Influence of Growth Duration Process on Morphology and Electrical Properties of SnO2 Nanostructured Films

2017 ◽  
Vol 268 ◽  
pp. 274-278
Author(s):  
Ruziana Mohamed ◽  
Khairunisa Md Salleh ◽  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Yahya Norihan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Immersion Time ◽  
Growth Duration ◽  
Immersion Method ◽  
Nanostructured Films ◽  
Nanostructured Thin Film ◽  
Current Voltage ◽  
20 Nm ◽  
Scanning Electron

Tin oxide (SnO2) nanostructured thin film with different immersion times was prepared on zinc oxide (ZnO) seeded catalyst using immersion method. The immersion times were varied at 3.0, 3.5 and 4.0 hours. Field emission scanning electron microscopy (FESEM) and two point probes current-voltage (I-V) measurements were used to study the surface morphology and electrical properties of SnO2 nanostructured thin films. The diameter size of SnO2 nanostructures which immersed at 3.0, 3.5 and 4.0 h were in range 10-20 nm, 20-30 nm and 30-50 nm, respectively. The results shows the highest electrical properties was at 3.0 h of immersion time.

Microstructure and Electrical Properties of ZnO-Pr6O11-Dy2O3-Based Varistor Ceramics Doped with La2O3

2007 ◽  
Vol 336-338 ◽  
pp. 680-683
Author(s):  
Jing Nan Cai ◽  
Yuan Hua Lin ◽  
Rong Juan Zhao ◽  
Ce Wen Nan ◽  
Jin Liang He
Keyword(s):  
Rare Earth ◽  
Phase Composition ◽  
Electrical Properties ◽  
Rare Earth Elements ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Intergranular Phase ◽  
Ceramic Method ◽  
Sem Micrographs ◽  
Ceramic Samples

ZnO-Pr6O11-Dy2O3-based varistor ceramics doped with 0~1.5 mol% La2O3 were fabricated by a conventional ceramic method. All the samples were sintered at 1350 oCfor 2 h. The phase composition and microstructure of the ceramic samples have been investigated by XRD, SEM and EDS. The results of SEM micrographs indicated that the La2O3 additives can promote ZnO grain’s growth, and the rare earth elements dispersed mainly in the intergranular phase observed by EDS. The electrical properties of the samples determined by the V-I curves revealed that the breakdown voltage of samples decreases from 508 V/mm to about 100 V/mm with the increase of La2O3, and the nonlinear exponent also decreases from 20.2 to 13.2. The typical leakage current is about 10.2 μA for the sample doped with 0.5 mol% La2O3.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals The Effects of Sn-Doping on a-Fe2O3 Nanostructures Properties

2018 ◽  
Vol 7 (3.11) ◽  
pp. 34
Author(s):  
W R.W. Ahmad ◽  
M H. Mamat ◽  
A S. Zoolfakar ◽  
Z Khusaimi ◽  
M M. Yusof ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Glass Substrate ◽  
Optical And Electrical Properties ◽  
Immersion Method ◽  
Coated Glass Substrate ◽  
Sn Doping ◽  
Sn Dopant ◽  
Surface Morphologies

In this study, undoped and Sn-doped hematite (α-Fe2O3) nanostructures with variation of Sn (0.5, 1, 2, 3 at. %) were deposited on fluorine doped tin oxide (FTO) coated glass substrate using sonicated immersion method. The effect of Sn-dopant on structural and crystallinity properties were investigated by characterizing FESEM and XRD respectively, while the optical properties were measured by UV-Vis-NIR spectrometer. The surface morphologies from FESEM have shown that the hematite nanostructures were grown uniformly in all samples. However, as the dopant atomic percentage increases, the amount of hematite nanostructure being grown on the FTO decreases. Results demonstrated that the amount of Sn-doping was undoubtedly influence the structural, optical and electrical properties of hematite nanostructures.  

The Development of Hemp Fibre Nonwovens

2015 ◽  
Vol 1117 ◽  
pp. 227-230
Author(s):  
Uljana Iljina ◽  
Ilze Baltina ◽  
Stephen Russell
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Nanoparticles ◽  
Research Work ◽  
Oxide Nanoparticles ◽  
Hemp Fibre ◽  
Hemp Fibres

Hemp fibre nonwovens are developed in the research work with a goal to the materials surface modification applying metal and metal oxide nanoparticles. It is planned to investigate the electrical properties of nonwovens to determine their ability to serve as radiation insulation. Fibres cut into 5 cm long, some of them passed through Laroche Cadette equipment twice that opens the fibres and part manually combed before making nonwovens. Carded webs formed from prepared fibres by parallel-laid carding method. The fibres opened by using Laroche Cadette equipment formed web only by mixing hemp fibres with 15% Tencel fibres. Clean hemp fibres webs created from manually combed fibres. Hemp fibres nonwovens created by using hydroentanglement method.

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Characterizing the stress and electrical properties of superconducting molybdenum films

2021 ◽  
Author(s):  
Yeru Wang ◽  
yajie Liang ◽  
Jiao Ding ◽  
Naihui Chen ◽  
Yanling Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Transition Edge Sensor ◽  
Residual Resistivity ◽  
Film Deposition ◽  
Physical Mechanisms ◽  
Deposition Parameters ◽  
Transition Edge ◽  
Sputtering Power ◽  
Correlative Studies ◽  
Deposition Techniques

Abstract In the process of minimizing stress in sputtered Molybdenum (Mo) films for fabricating transition-edge sensor (TES) devices, we have investigated correlations between the stress and film deposition parameters. At a fixed sputtering power, the tensile stress of our film samples decreases toward both low and high ends of Ar pressure, suggestive of two physical mechanisms at work: an “atomic peening” effect at low Ar pressure and the development of voids at high Ar pressure. We have also carried out correlative studies of the stress and electrical properties (including superconducting critical temperature and residual resistivity) of the film samples, and found that the results are complex. We have made extensive comparisons with the published results, and attempted to explain the discrepancies in terms of film deposition techniques, sample preparation and treatment, and dynamical ranges of measurements. It is fairly clear that the microscopic properties, including porosity and disorder, of Mo films may have significant impact on the correlations.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Electrical properties of Li and Nb modified BiFeO3 ceramics with reduced leakage current

2021 ◽  
Vol 47 (3) ◽  
pp. 4217-4225
Author(s):  
Dan Xu ◽  
Wenjie Zhao ◽  
Wenping Cao ◽  
Weili Li ◽  
Weidong Fei
Keyword(s):  
Electrical Properties ◽  
Leakage Current
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