scholarly journals Fabrication of Diamond Submicron Lenses and Cylinders by ICP Etching Technique with SiO2 Balls Mask

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1622 ◽  
Author(s):  
Zongchen Liu ◽  
Tian-Fei Zhu ◽  
Yan-Feng Wang ◽  
Irfan Ahmed ◽  
Zhangcheng Liu ◽  
...  

Submicron lenses and cylinders exhibiting excellent properties in photodetector and quantum applications have been fabricated on a diamond surface by an inductively-coupled plasma (ICP) etching technique. During ICP etching, a layer containing 500 nm diameter balls of SiO2 was employed as mask. By changing the mixing ratio of O2, Ar and CF4 during ICP etching, several submicron structures were fabricated, such as cylinders and lenses. The simulation results demonstrated that such submicron structures on a diamond’s surface can greatly enhance the photon out-coupling efficiency of embedded nitrogen-vacancy center.

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 513
Author(s):  
Tianfei Zhu ◽  
Yan Liang ◽  
Zongchen Liu ◽  
Jiao Fu ◽  
Yanfeng Wang ◽  
...  

In this study, nitrogen-vacancy center emissions from nanocone structures fabricated on diamond surfaces by gold film annealing and inductively coupled plasma etching techniques were characterized. First, the diamond substate deposited with gold film was annealed to form a nano-sized dot mask. Second, through inductively coupled plasma etching, nanocone-shaped structures were fabricated using optimized gold dots as masks. Finally, the as-fabricated nanocone and planar structures were investigated with photoluminescence experiments at temperatures ranging from room temperature to 80 K, with the results showing approximately two-fold higher emission values for nitrogen-vacancy centers from nanocones.


2021 ◽  
Vol 118 (20) ◽  
pp. 204003
Author(s):  
P. Räcke ◽  
L. Pietzonka ◽  
J. Meijer ◽  
D. Spemann ◽  
R. Wunderlich

2013 ◽  
Vol 760-762 ◽  
pp. 137-140 ◽  
Author(s):  
Jie Guo ◽  
Rui Ting Hao ◽  
Qian Run Zhao ◽  
Shi Qing Man

InAs/GaSb superlattice in infrared detector was grown on GaSb substrates by molecular beam epitaxy technique. Using inductively coupled plasma (ICP) etching technique and Cl2/Ar etching gas, the smooth mesa of the device was formed. The influence of etching time, Cl2 percent and RF power on the etching rate and the surface morphology of InAs bulk, GaSb bulk materials and superlattice were studied. It showed that the etching rate of InAs was lower than that of GaSb and the etching surface was smooth at Cl2 in the range of 20%~40%. The results will benefit to forming ohm contact and decrease surface leakage current in the photovoltaic detector.


2021 ◽  
Vol 118 (26) ◽  
pp. 264002
Author(s):  
Moeta Tsukamoto ◽  
Kensuke Ogawa ◽  
Hayato Ozawa ◽  
Takayuki Iwasaki ◽  
Mutsuko Hatano ◽  
...  

2021 ◽  
pp. 127073
Author(s):  
Faisal Nadeem ◽  
Faizan Raza ◽  
Kangkang Li ◽  
Huanrong Fan ◽  
Irfan Ahmed ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.


2021 ◽  
Vol 92 (5) ◽  
pp. 055001
Author(s):  
Maosen Guo ◽  
Mengqi Wang ◽  
Pengfei Wang ◽  
Diguang Wu ◽  
Xiangyu Ye ◽  
...  

Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.


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