scholarly journals Influence of Pd Doping on Electrical and Thermal Properties of n-Type Cu0.008Bi2Te2.7Se0.3 Alloys

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4080 ◽  
Author(s):  
Se Yun Kim ◽  
Hyun-Sik Kim ◽  
Kyu Hyoung Lee ◽  
Hyun-jun Cho ◽  
Sung-sil Choo ◽  
...  

Doping is known as an effective way to modify both electrical and thermal transport properties of thermoelectric alloys to enhance their energy conversion efficiency. In this project, we report the effect of Pd doping on the electrical and thermal properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys. Pd doping was found to increase the electrical conductivity along with the electron carrier concentration. As a result, the effective mass and power factors also increased upon the Pd doping. While the bipolar thermal conductivity was reduced with the Pd doping due to the increased carrier concentration, the contribution of Pd to point defect phonon scattering on the lattice thermal conductivity was found to be very small. Consequently, Pd doping resulted in an enhanced thermoelectric figure of merit, zT, at a high temperature, due to the enhanced power factor and the reduced bipolar thermal conductivity.

2010 ◽  
Vol 650 ◽  
pp. 126-131 ◽  
Author(s):  
Hong Fu ◽  
Peng Zhan Ying ◽  
J.L. Cui ◽  
Y.M. Yan ◽  
X.J. Zhang

Solid solution formation is a common and effective way to reduce the lattice thermal conductivity for thermoelectric materials because of additional phonon scattering by point defects and grain boundaries. In the present work we prepared In2Te3–SnTe compounds using a mild solidification technique and evaluated their thermoelectric properties in the temperature range from 318705 K. Measurements reveal that the transport properties are strongly dependent on the chemical composition  In2Te3 content, and lattice thermal conductivity significantly reduces above a minimum In2Te3 concentration, which can possibly be explained by an introduction of the vacancy on the indium sublattice and periodical vacancy planes. The highest thermoelectric figure of merit ZT of 0.19 can be achieved at 705 K, and a big improvement of In2Te3 based alloys would be expected if a proper optimization to the chemical compositions and structures were made.


RSC Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 3304-3314
Author(s):  
Enamul Haque ◽  
Mizanur Rahaman

Weak anharmonicity: the weak anharmonicity leads to weak phonon scattering in SrGaSnH. Thus, SrGaSnH intrinsically possesses a high lattice thermal conductivity (kl).. Such large κl dramatically reduces the thermoelectric figure of merit.


2006 ◽  
Vol 510-511 ◽  
pp. 1070-1073 ◽  
Author(s):  
Il Ho Kim ◽  
J.B. Park ◽  
Tae Whan Hong ◽  
Soon Chul Ur ◽  
Young Geun Lee ◽  
...  

Zn4Sb3 was successfully produced by a hot pressing technique, and its thermoelectric properties were investigated in the temperature range from 4K to 300K. The Seebeck coefficient, electrical conductivity, thermal conductivity, and thermoelectric figure of merit showed a discontinuity in variation at 242K, indicating the α-Zn4Sb3 to β-Zn4Sb3 phase transformation. Lattice thermal conductivity was found to be dominant in the total thermal conductivity of Zn4Sb3. Therefore, it is expected that thermoelectric properties can be improved by reducing the lattice thermal conductivity inducing phonon scattering centers.


2018 ◽  
Vol 6 (25) ◽  
pp. 12125-12131 ◽  
Author(s):  
D. D. Fan ◽  
H. J. Liu ◽  
L. Cheng ◽  
J. H. Liang ◽  
P. H. Jiang

The lattice thermal conductivity of the SiGe compound can be significantly reduced by electron–phonon coupling at higher carrier concentration, which in turn obviously enhances its thermoelectric figure-of-merit.


Metals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 864 ◽  
Author(s):  
Eric Alleno

Besides alloying, nanostructuring was implemented to improve the thermoelectric properties in Fe2VAl. This Heusler alloy indeed displays a thermoelectric figure of merit too small for applications (ZT ~ 0.1 at 300 K) which is caused by a large lattice thermal conductivity (λL = 27 W·m−1·K−1 at 300 K). The effect of nanostructuring on the microstructure and on the thermoelectric properties of alloyed Fe2VAl are therefore reviewed. By mechanical alloying followed by spark plasma sintering, the average grain size (D) was decreased to D ~ 300–400 nm in Fe2VAl0.9Si0.1, Fe2VAl0.9Si0.07Sb0.03, Fe2V1.05Al0.95, and Fe2V0.9W0.1Al. As expected, phonon scattering at the numerous grain boundaries lead to a strong decrease in the lattice thermal conductivity, which reached values as small as λL = 3.3 W·m−1·K−1. However, in all the reviewed examples, the thermoelectric figure of merit (ZT) is only marginally or not even improved when comparing to non-nanostructured samples because the electrical resistivity also increases upon nanostructuring. A significantly improved ZT = 0.3 at 500 K was only recently observed in severely deformed Fe2VAl0.95Ta0.05 by high pressure torsion because the very fine microstructure (D ~ 100 nm) strongly enhanced the thermal conductivity reduction.


2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Eric Osei-Agyemang ◽  
Challen Enninful Adu ◽  
Ganesh Balasubramanian

AbstractAn emerging chalcogenide perovskite, CaZrSe3, holds promise for energy conversion applications given its notable optical and electrical properties. However, knowledge of its thermal properties is extremely important, e.g. for potential thermoelectric applications, and has not been previously reported in detail. In this work, we examine and explain the lattice thermal transport mechanisms in CaZrSe3 using density functional theory and Boltzmann transport calculations. We find the mean relaxation time to be extremely short corroborating an enhanced phonon–phonon scattering that annihilates phonon modes, and lowers thermal conductivity. In addition, strong anharmonicity in the perovskite crystal represented by the Grüneisen parameter predictions, and low phonon number density for the acoustic modes, results in the lattice thermal conductivity to be limited to 1.17 W m−1 K−1. The average phonon mean free path in the bulk CaZrSe3 sample (N → ∞) is 138.1 nm and nanostructuring CaZrSe3 sample to ~10 nm diminishes the thermal conductivity to 0.23 W m−1 K−1. We also find that p-type doping yields higher predictions of thermoelectric figure of merit than n-type doping, and values of ZT ~0.95–1 are found for hole concentrations in the range 1016–1017 cm−3 and temperature between 600 and 700 K.


2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Hyeona Mun ◽  
Jung Young Cho ◽  
Sang Sun Yang ◽  
Kyu Hyoung Lee ◽  
...  

Monoclinic Cux+yBi5−ySe8structure has multiple disorders, such as randomly distributed substitutional and interstitial disorders by Cu as well as asymmetrical disorders by Se. Herein, we report the correlation of electronic and thermal properties with the structural complexities of Cux+yBi5−ySe8. It is found that the interstitial Cu site plays an important role not only to increase the electrical conductivity due to the generation of electron carriers but also to reduce the thermal conductivity mainly due to the phonon scattering by mass fluctuation. With impurity doping at the interstitial Cu site, an extremely low lattice thermal conductivity of 0.32 W·m−1·K−1was achieved at 560 K. These synergetic effects result in the enhanced dimensionless figure of merit (ZT).


2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.


2001 ◽  
Vol 16 (3) ◽  
pp. 837-843 ◽  
Author(s):  
Xinfeng Tang ◽  
Lidong Chen ◽  
Takashi Goto ◽  
Toshio Hirai

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.


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