scholarly journals Highly Efficient n-Type Doping of Graphene by Vacuum Annealed Amine-Rich Macromolecules

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2166
Author(s):  
Young-Min Seo ◽  
Wonseok Jang ◽  
Taejun Gu ◽  
Dongmok Whang
Keyword(s):  
Figure Of Merit ◽  
Mechanical Stability ◽  
High Vacuum ◽  
Optical Transmittance ◽  
Chemical Doping ◽  
Next Generation ◽  
Practical Application ◽  
Doped Graphene ◽  
Transparent Conducting Electrodes ◽  
Large Charge

Flexible transparent conducting electrodes (FTCE) are an essential component of next-generation flexible optoelectronic devices. Graphene is expected to be a promising material for the FTCE, because of its high transparency, large charge carrier mobilities, and outstanding chemical and mechanical stability. However, the electrical conductivity of graphene is still not good enough to be used as the electrode of an FTCE, which hinders its practical application. In this study, graphene was heavily n-type doped while maintaining high transmittance by adsorbing amine-rich macromolecules to graphene. The n-type charge-transfer doping of graphene was maximized by increasing the density of free amine in the macromolecule through a vacuum annealing process. The graphene adsorbed with the n-type dopants was stacked twice, resulting in a graphene FTCE with a sheet resistance of 38 ohm/sq and optical transmittance of 94.1%. The figure of merit (FoM) of the graphene electrode is as high as 158, which is significantly higher than the minimum standard for commercially available transparent electrodes (FoM = 35) as well as graphene electrodes doped with previously reported chemical doping methods. Furthermore, the n-doped graphene electrodes not only show outstanding flexibility but also maintain the doping effect even in high temperature (500 K) and high vacuum (~10−6 torr) conditions. These results show that the graphene doping proposed in this study is a promising approach for graphene-based next-generation FTCEs.

The Practical Application of SiC as A Next-generation Semiconductor

2015 ◽  
Vol 135 (10) ◽  
pp. 676-679
Author(s):  
Shoichiro WATANABE ◽  
Kenichi KONDO ◽  
Ayaka MATSUOKA ◽  
Masafumi MIYATAKE ◽  
Yoshichika NODA
Keyword(s):  
Next Generation ◽  
Practical Application

Boosting Rate Performance of Li–S Batteries under High-Mass-Loading Sulfur based on Hierarchical NCNT@Co-CoP Nanowires Integrated Electrode

2021 ◽  
Author(s):  
Jianbo Li ◽  
Wenfu Xie ◽  
Shimeng Zhang ◽  
Simin Xu ◽  
Mingfei Shao
Keyword(s):  
Storage Systems ◽  
High Mass ◽  
Mass Loading ◽  
Rate Performance ◽  
Next Generation ◽  
Practical Application ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

Lithium−sulfur batteries (Li–S) has been gradual becoming one of the most promising next-generation storage systems, but its practical application is still limited by the extremely low S loading as well...

Mechanical Properties of Swelling Clays

1988 ◽  
Vol 127 ◽  
Author(s):  
D. Broc ◽  
F. Plas ◽  
J. C. Robinet
Keyword(s):  
Mechanical Properties ◽  
Mechanical Stability ◽  
Radioactive Waste Disposal ◽  
Storage Facility ◽  
Practical Application ◽  
Fracture Criteria ◽  
Waste Package ◽  
Swelling Clays ◽  
Clay Barrier ◽  
Macroscopic Examination

ABSTRACTThe safety of vitrified radioactive waste disposal in granite is based on the concept of multiple barriers, which include an engineered clay barrier placed between the waste package and the granite. The mechanical properties of the swelling clays used were studied with a view to practical application for storage facility dimensioning. This involved a macroscopic examination of the clays swelling capacities (for sealing of storage boreholes) and fracture criteria (mechanical stability).

Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide

2021 ◽  
Author(s):  
Min Sup Choi ◽  
Ankur Nipane ◽  
Brian Kim ◽  
Mark Ziffer ◽  
Ipshita Datta ◽  
...  
Keyword(s):  
Carrier Density ◽  
Phonon Scattering ◽  
High Mobility ◽  
Transparent Conductors ◽  
Ring Resonators ◽  
Chemical Doping ◽  
Electrostatic Model ◽  
Hole Density ◽  
Phase Modulators ◽  
Doped Graphene

Abstract Highly doped graphene holds promise for next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled, and introduces external disorder that significantly diminishes the carrier mobility and therefore the graphene conductivity. Here, we show that monolayer tungsten oxyselenide (TOS) created by oxidation of WSe2 acts as an efficient and low-disorder hole-dopant for graphene. When the TOS is directly in contact with graphene, the induced hole density is 3 × 1013 cm-2 , and the room-temperature mobility is 2,000 cm2 /V·s, far exceeding that of chemically-doped graphene. Inserting WSe2 layers between the TOS and graphene tunes the induced hole density as well as reduces charge disorder such that the mobility exceeds 20,000 cm2 /V·s and reaches the limit set by acoustic phonon scattering, resulting in sheet resistance below 50 Ω/□. An electrostatic model based on work-function mismatch accurately describes the tuning of the carrier density with WSe2 interlayer thickness. These films show unparalleled performance as transparent conductors at telecommunication wavelengths, as shown by measurements of transmittance in thin films and insertion loss in photonic ring resonators. This work opens up new avenues in optoelectronics incorporating two-dimensional heterostructures including infrared transparent conductors, electro-phase modulators, and various junction devices.

Electrochromic devices based on ultraviolet-cured poly(methyl methacrylate) gel electrolytes and their utilisation in smart window applications

2020 ◽  
Vol 8 (26) ◽  
pp. 8747-8754
Author(s):  
Hyun Joo Lee ◽  
Chanyong Lee ◽  
Juhee Song ◽  
Yong Ju Yun ◽  
Yongseok Jun ◽  
...  
Keyword(s):  
Methyl Methacrylate ◽  
Optical Transmittance ◽  
Next Generation ◽  
Electrochromic Devices ◽  
Smart Window ◽  
Smart Windows ◽  
Poly Methyl Methacrylate ◽  
Highly Efficient ◽  
Gel Electrolytes ◽  
Window Applications

Electrochromic devices (ECDs) have been widely investigated for application in next-generation displays and smart windows owing to their highly efficient optical transmittance modulation properties.

Pyrrolic-structure enriched nitrogen doped graphene for highly efficient next generation supercapacitors

2013 ◽  
Vol 1 (8) ◽  
pp. 2904 ◽  
Author(s):  
Fathy M. Hassan ◽  
Victor Chabot ◽  
Jingde Li ◽  
Brian Kihun Kim ◽  
Luis Ricardez-Sandoval ◽  
...  
Keyword(s):  
Next Generation ◽  
Nitrogen Doped ◽  
Highly Efficient ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

Chemical Doping of Large-Area Stacked Graphene Films for Use as Transparent, Conducting Electrodes

ACS Nano ◽  
2010 ◽  
Vol 4 (7) ◽  
pp. 3839-3844 ◽  
Author(s):  
Amal Kasry ◽  
Marcelo A. Kuroda ◽  
Glenn J. Martyna ◽  
George S. Tulevski ◽  
Ageeth A. Bol
Keyword(s):  
Chemical Doping ◽  
Large Area ◽  
Graphene Films ◽  
Transparent Conducting ◽  
Transparent Conducting Electrodes

Thallium-Free Thermoelectric Materials with Extremely Low Thermal Conductivity

2007 ◽  
Vol 1044 ◽  
Author(s):  
Shinsuke Yamanaka ◽  
Ken Kurosaki ◽  
Anek Charoenphakdee ◽  
Hideaki Mastumoto ◽  
Hiroaki Muta
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Next Generation ◽  
Practical Application ◽  
Low Thermal Conductivity ◽  
New Class ◽  
Thallium Compounds ◽  
Thallium Tellurides

AbstractWith the goal of developing high-performance bulk thermoelectric materials, we have characterized ternary silver thallium tellurides. The ternary silver thallium tellurides exhibit extremely low thermal conductivity (<0.5 Wm−1K−1) and consequently their thermoelectric performance is excellent. Although the extremely low thermal conductivity materials, as typified by the ternary silver thallium tellurides, would be a new class of next-generation thermoelectric materials, thallium compounds are unsuitable for practical application because of their toxicity. Against such a background, we are currently exploring thallium-free thermoelectric materials with extremely low thermal conductivity. In this paper, we will briefly summarize the thermoelectric properties of ternary thallium tellurides obtained in our group. Further experiments aimed at improving the ZT of these materials will be presented. Finally, we will propose two candidates: Ag8GeTe6 and Ga2Te3 as thallium-free low thermal conductivity materials.

Sign in / Sign up

Export Citation Format

Share Document