scholarly journals Insights on Substitution Preference of Pb Ions in Sulfoaluminate Cement Clinker Phases

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 44
Author(s):  
Jianping Zhu ◽  
Yang Chen ◽  
Li Zhang ◽  
Kuo Yang ◽  
Xuemao Guan ◽  
...  
Keyword(s):  
Environmental Protection ◽  
Density Of States ◽  
Density Functional ◽  
Cement Clinker ◽  
Partial Density ◽  
Electron Density Difference ◽  
Ca Ions ◽  
Pb Ions ◽  
Theoretical Simulations ◽  
Local Distortions

The doping behaviors of Pb in sulfoaluminate cement (SAC) clinker phases were systematically studied combined with density functional theoretical simulations and experiments. The results present that, in the three composed minerals of C4A3S, C2S, and C4AF, Pb ions prefer to incorporate into C4A3S by substituting Ca ions. Further analyses from partial density of states, electron density difference, and local distortions show that such doping preference can be attributed to the small distortions as Pb introduced at Ca sites of C4A3S. The results and clear understandings on the doping behaviors of Pb ions may provide valuable information in guiding the synthesis of Pb-bearing SAC clinker, thus should draw broad interests in fields from sustainable production of cement and environmental protection.

A STUDY ON STRAIN AFFECTING ELECTRONIC STRUCTURE OF WURTZITE ZnO BY FIRST PRINCIPLES

2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Functional Theory ◽  
Electron Density Difference ◽  
Different Strains

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.

Electronic Properties of Calcium and Zirconium Co-Doped BaTiO3

2020 ◽  
Vol 1010 ◽  
pp. 308-313
Author(s):  
Akeem Adekunle Adewale ◽  
Abdullah Chik ◽  
Ruhiyuddin Mohd Zaki
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Density Of States ◽  
Energy Band ◽  
Density Functional ◽  
Partial Density ◽  
Total Density ◽  
Energy Band Gap ◽  
Wide Energy ◽  
Direct Band

Barium titanate (BaTiO3) is a perovskite based oxides with many potential application in electronic devices. From experimental report BaTiO3 has wide energy band gap of about 3.4 eV which by doped with Ca and Zr at A- and B- sites respectively can enhance their piezoelectric properties. Using first principles method within the density functional theory (DFT) as implement in Quantum Espresso (QE) with the plane wave pseudo potential function, the influence of the Ca and Zr doping in BaTiO3 are studied via electronic properties: band structure, total density of states (TDOS) and partial density of states (PDOS). The energy band gap calculated was underestimation which is similar to other DFT work. Two direct band gap where observed in Ba0.875Ca0.125Ti0.875Zr0.125O3 sample at Γ- Γ (2.31 eV) and X- X (2.35 eV) symmetry point.

First-Principles Study of Electronic Structure and Optical Properties of V-Doped CrSi2

2015 ◽  
Vol 1104 ◽  
pp. 125-130 ◽  
Author(s):  
Fang Gui ◽  
Shi Yun Zhou ◽  
Wan Jun Yan ◽  
Chun Hong Zhang ◽  
Shao Bo Chen
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Optical Parameters ◽  
Total Density ◽  
Type Semiconductor ◽  
Refractive Index Increase ◽  
P Type

The electronic structure and optical properties of V-doped CrSi2 have been calculated by using the first-principle peudo-potential plane-wave method based on the density functional theory.The parameters and properties of structure were given and the theory data were offered to research the effect of V doping into CrSi2. The calculations of energy band structure, total density of states, partial density of states of V-doped CrSi2were analysed. Fermi level enters into valence band which makes the V-doped CrSi2to be p-type semiconductor that improves the electrical conductivity of material. Additionally, the optical parameters of V-doped CrSi2were also discussed. It was found that both static dielectric constant and static refractive index increase after doping.

Physical properties of ThCr2Si2-type Rh-based compounds ARh2Ge2(A = Ca, Sr, Y and Ba): DFT based first-principles investigation

2018 ◽  
Vol 32 (32) ◽  
pp. 1850357 ◽  
Author(s):  
M. U. Salma ◽  
Md. Atikur Rahman
Keyword(s):  
Thermal Conductivity ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Total Density ◽  
Coating Materials ◽  
Metallic Behavior ◽  
Density Maps ◽  
Debye Temperatures ◽  
Low Energies

In this paper, we have explored the physical, mechanical, chemical bonding, dialectical and thermodynamic properties of ARh2Ge2 (A = Ca, Sr, Y and Ba) theoretically for the first time. This investigation has been completed by density functional theory (DFT) calculations with the help of CASTEP code. The structural optimized factors of ARh2Ge2 (A = Ca, Sr, Y and Ba) are in excellent concurrence with the existing experimental data. The observed elastic constants are positive and prove the mechanical constancy for all these compounds. The calculated Pugh’s ratio and Poisson’s ratio show the ductile behaviors of Ca/YRh2Ge2 and brittleness behaviors of Sr/BaRh2Ge2, whereas the Cauchy pressure indicates the ductility for all these phases. The anisotropic factors, universal anisotropy indicator and fraction of anisotropy in compression and shear ensure the elastically anisotropic nature for all these phases. Bulk modulus and hardness values indicate that Sr/BaRh2Ge2 are soft and easily machinable in comparison with Y/CaRh2Ge2. The analysis of the band structure diagrams as well as density of states (total density of states and partial density of states) evidence the metallic behavior for all the compounds. The analysis of Mulliken bond populations and charge density maps give the existence of covalent and metallic bonding in these compounds. The optical properties point out that all phases can be used as coating materials at low energies. For all the phases the Debye temperatures have been calculated via elastic constant data. We have also evaluated the minimum thermal conductivity for these compounds. All compounds possess the relatively low minimum thermal conductivity with the low value of Debye temperatures which also evidence that all compounds could be applied like thermal fence covering material.

First Principles Investigation of Electronic Structure, Chemical Bonding, Elastic and Optical Properties of Novel Rhenium Nitrides

2012 ◽  
Vol 512-515 ◽  
pp. 883-889
Author(s):  
Qing Lin Xia ◽  
Liu Xian Pan ◽  
Yuan Dong Peng ◽  
Li Ya Li ◽  
Hong Zhong Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Shear Modulus ◽  
Bulk Modulus ◽  
Density Of States ◽  
Chemical Bonding ◽  
Density Functional ◽  
Elastic Anisotropy ◽  
Hexagonal Phase ◽  
Partial Density

we investigate the electronic structure, chemical bonding, optical and elastic properties of the novel rhenium nitrides, hexagonal phase re3n and re2n by using density-functional theory (dft) within generalized gradient approximation (gga). the calculated equilibrium lattice constants of both re3n and re2n are in reasonable agreement with the experimental results. the band structure along the higher symmetry axes in the Brillouin zone, the density of states (dos) and the partial density of states (pdos) are presented. the calculated energy band structures and dos show that re3n and re2n are metal compounds. The dos and pdos show that the dos at the fermi level (ef) is located at the bottom of a valley and originate mainly from the 5d electrons of re. population analyses suggest that the chemical bonding in re3n and re2n has predominantly covalent character with mixed covalent and ionic characteristics. the dielectric function, reflectivity, absorption coefficient, refractive index, electron energy-loss function and optical conductivity are presented in an energy range for discussing the optical properties of re3n and re2n. basic mechanical properties, such as elastic constants cij, bulk modulus b and shear modulus g are calculated. The young’s modulus e, poisson's ratio ν and bh/gh are also predicted. results conclude that the hexagonal phase re3n and re2n are mechanical stable and behaves in a ductile manner. polycrystalline elastic anisotropy is also derived from polycrystalline bulk modulus b and shear modulus g.

scholarly journals First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Bei Xu ◽  
Changjun Zhu ◽  
Xiaomin He ◽  
Yuan Zang ◽  
Shenghuang Lin ◽  
...  
Keyword(s):  
Charge Density ◽  
Electronic Properties ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculation ◽  
Partial Density ◽  
Total Charge ◽  
Relaxation Energy ◽  
Total Charge Density

First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4H-SiC(0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature. The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding.

scholarly journals Study on Electronic and Optical Properties of Graphene Oxide Under an External Electric Field From First-principles

2021 ◽  
Author(s):  
Abdehafid Najim ◽  
Omar BAJJOU ◽  
Mustapha BOULGHALLAT ◽  
Mohammed Khenfouch ◽  
Khalid Rahmani
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Total Density ◽  
Electronic And Optical Properties

Abstract Electronic and optical properties of graphene oxide (GO), under an external electric field (Eext) applied in three directions of space (x, y, z), are investigated using the density functional theory (DFT). The application of the Eext, causes a significant modifications to the electronic and optical properties of GO material. It has change the band gap, total density of states (TDOS), partial density of states (PDOS), absorption coefficient (α), dielectric function, optical conductivity, refractive index and loss function. The band gap of GO layer increases under the effects of the Eext, applied in x and y directions. On the other hand, for z direction, the band gap decreases by the effects of the Eext. The peaks of the TDOS around the Fermi level, change by the Eext applied in (x, y, z) directions. The α peaks of the GO sheet, decreases by the Eext applied in x direction, and increases if Eext applied in y and z directions. It is found that, the electronic and optical properties of GO layer, could be affected by the effects of the Eext and by its direction of application.

scholarly journals ATiO3 (A = Ca, Sr, Ba & BP) Pervoskites in Cubic and Tetragonal Phase using TB-LMTO-ASA Method

2019 ◽  
Vol 9 (2S2) ◽  
pp. 707-714
Keyword(s):  
Band Gap ◽  
Density Of States ◽  
Tetragonal Phase ◽  
Density Functional ◽  
Tight Binding ◽  
Partial Density ◽  
Cubic Phase ◽  
Lmto Method ◽  
Orbital Position ◽  
Sphere Approximation

Ground state properties of ATiO3 (A = Ca, Sr, Ba & Pb) pervoskite structures in cubic and tetragonal phase were studied by tight binding linear muffin-tin orbital (TB-LMTO) method in the framework of density functional theory (DFT) with the atomic-sphere approximation (ASA). The total energy of all the compounds come under the above said structures have shown that the cubic phase is the stable structure in the ambient condition. Among these pervoskites maximum bulk modulus was obtained for BaTiO3 . Direct (cubic) and indirect (tetragonal) band gap was observed from the band structure calculations and the values fall within the range of 1.5 – 1.7 eV. Electron distribution of each element in the valence and conduction bands was clearly obtained from the density of states (DOS) and partial density of states (PDOS) for all the compounds. The magnetization values were found in the range of 0.4 – 0.56 x 10-5µB. The‘d’ orbital position of Ti was observed for all the ABO3 compounds and shifted away from the Fermi level except for Ti in BaTiO3 . The refractive indices of the pervoskites were calculated from the energy band gap and the value is above 3 for all the compounds.

scholarly journals Hydrolysis Mechanism of Bismuth in Chlorine Salt System Calculated by Density Functional Method

2020 ◽  
Vol 71 (6) ◽  
pp. 178-193
Author(s):  
Liao Chunfa ◽  
Xu Zhenxin ◽  
Zou Jianbai ◽  
Jiang Pinguoo
Keyword(s):  
Density Of States ◽  
Density Functional ◽  
Energy Gap ◽  
Density Functional Method ◽  
Covalent Bond ◽  
Salt System ◽  
Hydroxyl Group ◽  
Partial Density ◽  
Hydroxyl Groups ◽  
Total Density

Based on the density functional theory, this paper presents the calculated cellular electronic properties of BiCl3, BiOCl and Bi3O4Cl, including unit cell energy, band structure, total density of states, partial density of states, Mulliken population, overlapping population, etc. Combined with the thermodynamic analysis of Bi3+ hydrolysis process in chlorine salt system, the conversion mechanism of oxychloride bond in BiCl3 to form BiOCl and Bi3O4Cl by hydrolysis, ethanololysis and ethylene glycol alcohololysis was obtained by infrared spectroscopy. The results indicate that the energy of Bi3O4Cl cell system was lower than that of BiOCl cell, indicating that the structure of Bi3O4Cl was more stable. From the analysis of bond fluctuation, the electron nonlocality in BiOCl belt was relatively large, and the orbital expansibility was strong; thus the structure of BiOCl was relatively active. The state density map of Bi3O4Cl had the widest energy gap, i.e., the covalent bond between Bi3O4Cl was stronger than BiOCl. Therefore, the hydrolysis of BiCl3 would preferentially generate Bi3O4Cl with a more stable structure. The number of charge arrangement, overlapping population and infrared spectrogram indicate that there were two basic ways in the hydrolysis and alcoholysis of BiCl3. Firstly, two chlorine atoms in BiCl3 were replaced by hydroxyl groups ionized by water and alcohol to form [Bi(OH)2Cl] monomer, and BiOCl and Bi3O4Cl were formed by intra-molecular dehydration or inter-molecular dehydration. The other way was that the Bi atom directly reacted with the OH ionized by water and alcohol to form the [Bi-OH] monomer, and the Cl atom replaced the H atom on the hydroxyl group in the [Bi-OH] monomer to further form BiOCl and Bi3O4Cl.

scholarly journals DFT Study on Structural, Electronic and Optical Properties of Ag-Doped SrTiO3 Perovskite for Optoelectronic Applications

2021 ◽  
Author(s):  
Jalil Rehman ◽  
M.Awais Rehman ◽  
Muhammad Bilal Tahir ◽  
Muhammad Usman ◽  
Faisal Iqbal
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Electronic Band ◽  
Ag Doping ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

This study addresses the first-principles analysis using generalized gradient approximation (GGA), which is pillared on density functional theory (DFT), to find the effects of silver (Ag) doping on SrTiO3 structurally, electronically and optical properties. As Ag doping into SrTiO3, we see a small decrease in the volume of unit cell. Moreover, Ag-doping adds new states in SrTiO3 at Brillouin zone symmetry points, transferring host material’s indirect band gap to a direct band gap. Ag doping in SrTiO3 results in the transfer density of states to smaller energies and increase in interaction among Ag atom and its surrounding atoms. Moreover, at the conduction band, the partial density of states (PDOS) of SrTiO3 changes generally. As a result, we conclude that Ag doping has an effect on the electronic band structure of SrTiO3. SrTiO3 doping with Ag has improved optical properties and its ability of converting to direct band gap results it in a perfect choice for optoelectronic applications.

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