scholarly journals Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6042
Author(s):  
Piotr Wiśniewski ◽  
Jakub Jasiński ◽  
Andrzej Mazurak ◽  
Bartłomiej Stonio ◽  
Bogdan Majkusiak
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Equivalent Circuit ◽  
Resistive Switching ◽  
Measurement Techniques ◽  
Complex Impedance ◽  
Electrical Characterization ◽  
Electrical Equivalent Circuit ◽  
Switching Phenomenon ◽  
Measurement Results

In this study, the resistive switching phenomenon in Al/SiO2/n++-Si structures is observed and studied by means of DC, small-signal admittance, and complex impedance spectroscopy measurements. Possible transport mechanisms in the high and low resistance states are identified. Based on the results of the applied measurement techniques, an electrical equivalent circuit of the structure is proposed. We discuss the effect of parasitic elements influencing the measurement results and show that a proper model can give useful information about the electrical properties of the device. A good agreement between the characteristics of the proposed equivalent circuit and the experimental data, based on different measurement procedures, confirms the validity of the used methodology and its applicability to the electrical characterization of RRAMs.

IMPEDANCE SPECTROSCOPY AND MAGNETIC PROPERTIES OF AURIVILLIUS STRUCTURES

2012 ◽  
Vol 02 (03) ◽  
pp. 1250015
Author(s):  
S. K. PATRI ◽  
R. N. P. CHOUDHARY ◽  
C. RINALDI
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Complex Impedance ◽  
Hysteresis Loops ◽  
Solid State Reaction Method ◽  
Layered Perovskite ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Layered Perovskite Structure

Bi 9-x Fe 5+x Ti 3 O 27 (x = 0-3) compounds of bismuth layered perovskite structure have been successfully prepared by solid-state reaction method. X-ray diffraction (XRD) studies revealed the orthorhombic crystal structure of all the compounds. Impedance spectroscopy has been studied to characterize the electrical properties of polycrystalline Bi 9-x Fe 5+x Ti 3 O 27 (x = 0-3) compounds. The shape of complex impedance curves inferred the contribution of bulk and grain boundary effects on the electrical properties of the compounds. Temperature dependent magnetization measurements were made from 2 K to 300 K. Narrow hysteresis loops observed at room temperature indicate antiferromagnetic behavior of the compounds.

scholarly journals Electrical conductivity and dielectric behaviour of nanocrystalline La0.6Gd0.1Sr0.3Mn0.75Si0.25O3

RSC Advances ◽  
2018 ◽  
Vol 8 (17) ◽  
pp. 9103-9111 ◽  
Author(s):  
Ah Dhahri ◽  
E. Dhahri ◽  
E. K. Hlil
Keyword(s):  
Electrical Conductivity ◽  
Equivalent Circuit ◽  
Complex Impedance ◽  
Impedance Spectrum ◽  
Dielectric Behaviour ◽  
Complex Impedance Spectrum ◽  
Electrical Equivalent Circuit ◽  
Different Temperatures

A complex impedance spectrum for La0.6Gd0.1Sr0.3Mn0.75Si0.25O3 sample at different temperatures with electrical equivalent circuit.

DC-Bias Dependent Impedance and UV-Vis Diffuse Reflectance Spectroscopy of The Un-Doped and Nb-Doped Ba0.97La0.02TiO3 Ceramics

2021 ◽  
Author(s):  
Marwa Jebli ◽  
Nejeh Hamadoui ◽  
chaker rayssi ◽  
Jemai Dhahri ◽  
Mouna Ben Henda ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Low Voltage ◽  
Electrochemical Impedance ◽  
Diffuse Reflectance Spectroscopy ◽  
Complex Impedance ◽  
Perovskite Oxide ◽  
Generation Process ◽  
Mobility Of Charge Carriers ◽  
Dc Bias

Abstract This report typically discusses the Voltage-Stability (V-S) of the electrical properties of a new perovskite oxide, Ba0.97La0.02Ti1-xNb4x/5O3 (noted BLT, BLT0.9Nb0.08) ceramics which have been meticulously studied. The ceramics typically exhibited a low rise in the real and imaginary parts of the complex impedance on the application of small field levels (up to 5 V). These accurate data, at a low voltage threshold, properly designate a hole-generation process which becomes active. These values considered using AC impedance spectroscopy, nonetheless, were relatively decreased with increasing Nb concentration, as well as increased by this application of a DC bias. For each sample, the complex impedance plot displayed a single impedance semicircle, identified over the high and low frequencies. The equivalent circuit configuration was typically fitted using the Electrochemical Impedance Spectroscopy (EIS) spectra analyzer. Importantly, the electrical properties of our both compounds deduced from the complex electric modulus show a conduction process due to the short-range mobility of charge carriers. An excellent addition of Niobium to some considerable extent can inhibit the grain growth. Conspicuously, the substitution of Nb5+ ions for Ti4+ on B sites leads to the noticeable increase of a band gap. These findings supplied critical insights into the electric mechanisms in BT-based ceramics.

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