Effects Of Ar+ Ion Bombardment on the Nucleation and Growth of Ag Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
C.M. Cotell ◽  
J.A. Sprague ◽  
C.R. Gossett
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Ion Beam ◽  
Nucleation And Growth ◽  
Nucleation Behavior ◽  
Si Substrates ◽  
Film Nucleation ◽  
Pvd Film

ABSTRACTThin films of Ag were grown on amorphous C and <111= Si substrates with simultaneous Ar+ bombardment at energies ranging from 50–40,000 eV. For deposition of Ag on amorphous C, ion beam bombardment induced no changes in film nucleation behavior relative to evaporation (henceforth referred to as physical vapor deposition, PVD). Film growth was affected at the highest energy (40 keV); the grain size of the Ag films was increased by a factor of three. Rutherford Backscattering (RBS) measurements on Ag films on <111=Si bombarded with Ar+ at 1.5 keV showed that the Ag sputtering yield at film thicknesses <1.5 nm was less than for bulk Ag, in agreement with TRIM calculations. At 40 keV there was evidence for an additional effect of the ion beam due to recoil implantation or ion mixing. Electron diffraction from Ag fdms grown on <111= Si substrates with simultaneous Ar+ bombardment at either 1.5 keV or 40 keV showed evidence for only the expected phases: single crystal Si, polycrystalline Ag, and an amorphous phase that likely resulted from ion damage to the substrate.

Controlled Stress Refractory Metallizations

2001 ◽  
Vol 695 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Electrically Conductive ◽  
Complete Control ◽  
Chemical Inertness

ABSTRACTRhodium and iridium are highly electrically conductive refractory metals, which can be used as current-carrying thin-film metallizations. Their chemical inertness further enables their application at relatively high temperatures. However, due to the high elastic modulus of such metals, a residual tensile stress of 300 to 400 MPa is measured in evaporated thin films. We present novel results evidencing complete control over both the magnitude and the sign of the residual stress in such refractory thin films. The metallic layers are deposited by means of ion-beam-enhanced physical vapor deposition and both electrical resistivity and stress are controlled. Controlling the stress in this manner has enabled achieving thicker films and films with near-zero residual stress.

Microstructure of TiN films and interfaces formed by ion-beam-enhanced deposition and simple physical vapor deposition

1995 ◽  
Vol 10 (4) ◽  
pp. 995-999 ◽  
Author(s):  
Z.Y. Cheng ◽  
Jing Zhu ◽  
X.H. Liu ◽  
Xi Wang ◽  
G.Q. Yang
Keyword(s):  
Mixed Layer ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Amorphous Material ◽  
Ion Bombardment ◽  
Amorphous Layer ◽  
Preferred Orientation ◽  
Tin Films ◽  
Si Substrates

The microstructure and composition of TiN films, formed by ion beam enhanced deposition (IBED) with different energy (40 keV and 90 keV) xenon ion bombardment and by simple physical vapor deposition (hereafter S-PVD) without any ion beam enhancement, and the interfaces between TiN films and Si substrates have been studied by cross-sectional view analytical electron microscopy in this work. Both the IBED TiN films prepared by Xe+ bombardment with either 40 keV or 90 keV energy ions and the S-PVD TiN film consist of nanocrystals. The TEM observations in the S-PVD case reveal an amorphous layer and a mixed layer of TiN grains and amorphous material at the TiN/Si interface. The thicknesses of the amorphous layer and the mixed layer are about 210 nm and at least 40 nm, respectively. Upon 40 keV Xe+ bombardment, an amorphous Si transition layer of about 50 nm thickness is found at the TiN/Si interface, and the TiN grains close to the TiN/Si interface are of weak preferred orientation. Upon 90 keV Xe+ bombardment, amorphous TiN and Si layers are found with a total thickness of 80 nm at the TiN/Si interface, and the TiN grains near the TiN/Si interface are of preferred orientation [111]TiN ‖ [001]Si. The energy of xenon ion bombardment has a strong effect on the microstructural characteristics of TiN films and the interfaces between the TiN films and the Si substrates, as well as the size and the preferred orientation of TiN grains.

scholarly journals Ultrasmooth Organic Films Via Efficient Aggregation Suppression by a Low-Vacuum Physical Vapor Deposition

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7247
Author(s):  
Youngkwan Yoon ◽  
Jinho Lee ◽  
Seulgi Lee ◽  
Soyoung Kim ◽  
Hee Cheul Choi
Keyword(s):  
Thin Films ◽  
Thermal Energy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Organic Thin Films ◽  
Smooth Surfaces ◽  
Adsorbed Molecules

Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to produce ultrasmooth organic thin films through effectively suppressing the aggregation of adsorbed molecules. We have found that thermal energy control is essential for the spread of molecules on a substrate by diffusion and it prohibits the unwanted nucleation of adsorbed molecules. FCPVD is employed for cooling the horizontal tube-type organic vapor deposition setup to effectively remove thermal energy applied to adsorbed molecules on a substrate. The organic thin films prepared using the FCPVD method have remarkably ultrasmooth surfaces with less than 0.4 nm root mean square (RMS) roughness on various substrates, even in a low vacuum, which is highly comparable to the ones prepared using conventional high-vacuum deposition methods. Our results provide a deeper understanding of the role of thermal energy employed to substrates during organic film growth using the PVD process and pave the way for cost-effective and high-performance organic devices.

Refractory Thin-Film Metallizations with Controlled Stress and Electrical Resistivity

2001 ◽  
Vol 699 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Resistivity ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Si Substrates ◽  
Chemical Inertness ◽  
Temperature Deposition ◽  
Beam Parameters

AbstractRhodium and iridium are refractory metals which possess intrinsically high electrical conductivity, and their chemical inertness enables their use at relatively high temperatures in microelectronics. However, due to the high Young's modulus of these materials, a residual tensile stress of hundreds of MPa is measured in evaporated thin films. New data is presented, demonstrating control over both the magnitude and the sign of the residual stress in such refractory thin films formed by means of ion-beam-enhanced physical vapor deposition on oxidized Si substrates. The electrical resistivity and stress are determined by controlling the substrate temperature, deposition rate and ion beam parameters. Thicker films are achieved in this manner, including films with near-zero residual stress.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Synthesis of lead oxide thin films by using physical vapor deposition technique

2021 ◽  
Vol 42 ◽  
pp. 2752-2755
Author(s):  
Ahmed F. Abdulrahman ◽  
Raghad Y. Mohammed ◽  
Sabah M. Ahmed ◽  
Samir M. Hamad
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Lead Oxide ◽  
Physical Vapor Deposition ◽  
Deposition Technique ◽  
Oxide Thin Films ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

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