scholarly journals Determination of Complex Dielectric Permittivity of Loss Materials at Microwave Frequencies

2003 ◽  
Vol 8 (3) ◽  
pp. 319-326 ◽  
Author(s):  
U. Hasar ◽  
M. Akay ◽  
S. Kharkovsky
2019 ◽  
Vol 946 ◽  
pp. 129-133
Author(s):  
Vitaly Smolko ◽  
Elizaveta Antoshkina

The article describes the problem of the experimental determination of complex dielectric permittivity for natural, activated, and modified quartz systems. The results of determination of specific surface, complex dielectric permittivity, sands porosity are presented in this article. The authors obtained the empirical equation of complex dielectric permittivity calculation for natural, activated, and modified quartz sands, taking into account the effect of moisture, specific surface, porosity, impurities content into consideration. The modification of the sand surface by means of mechanical beneficiation and ultrasonic treatment leads to reduction of complex dielectric permittivity and specific surface, thus contributing to the increase of the active centers quantity on the sands surface. The modification of the sand surface by polyvinyl alcohol aqueous solution leads to increase of complex dielectric permittivity. Polyvinyl alcohol aqueous solution modification envisages the creation of new active centers by oligomers inoculation to the surface and blocking the clay component and authigenous film ingredients. Among the considered methods, ultrasonic treatment in aqueous solution and mechanical beneficiation are the most efficient and technologically acceptable ways of activation.


2018 ◽  
Vol 251 ◽  
pp. 02025 ◽  
Author(s):  
Victor Yavna ◽  
Zelimkhan Khakiev ◽  
Georgy Lazorenko ◽  
Anton Kasprzhitskii ◽  
Sergey Sulavko

This work covers methods of GPR monitoring of constructions that are quasi-homogeneous ground layers. The monitoring methods include the determination of complex dielectric permittivity and moisture of the construction layers of highways and railways. In order to obtain quantitative values of these parameters the GPR method is calibrated via the measurement of these quantities using the resonance method at frequencies close to the central frequency of the microwave radiation used.


Author(s):  
Sema Türkay ◽  
Adem Tataroğlu

AbstractRF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.


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