Nitrogen Solubility in Liquid Ni-V, Ni-Ta, Ni-Cr-V, and Ni-Cr-Ta Alloys

An investigation has been made concerning the solubility of nitrogen in liquid binary alloys (Ni-V and Ni-Ta) and ternary alloys (Ni-Cr-V and Ni-Cr-Ta) by sampling method. The experiments were carried out in the temperature range from 1773 K to 1873 K and under the nitrogen partial pressure up to 1.0 bar. A technique involving induction melting and a rapid quench device has been used in this study. It has been found that Sieverts’ law successfully describes the nitrogen dissolution in all these liquid alloys up to 1.0 bar of nitrogen gas partial pressure. The additions of vanadium, tantalum and chromium significantly increase the nitrogen solubility, especially vanadium-alloying addition. Furthermore, we have determined the interaction parameters, enthalpies and entropies of nitrogen dissolution in these liquid alloys.

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The Effect of Nitrogen Partial Pressure on Microstructure of Reaction Bonded Silicon Nitride

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.121-123.231 ◽

2007 ◽

Vol 121-123 ◽

pp. 231-234

Author(s):

Chan Park ◽

Kook Soo Bang ◽

Kwon Taek Lim ◽

Dong Soo Park ◽

Hai Doo Kim

Keyword(s):

Silicon Nitride ◽

Partial Pressure ◽

Reaction Layer ◽

Early Stage ◽

Nitrogen Partial Pressure ◽

Nitrogen Gas ◽

Band Formation ◽

Static State ◽

Gas Atmosphere ◽

Computer Controlled

The interaction between gas atmosphere and silicon during reaction bonded silicon nitride(RBSN)process leads to a non-uniform band formation of alpha silicon nitride. The reaction layer, α -Si3N4, was formed near the surface of the sample in the early stage of RBSN. Reactive nitrogen gas was supplied as static state using computer controlled gas delivery system. The formation of α -Si3N4 band near the surface of the sample can be explained thermodynamically, based on the nitrogen partial pressure in the gas mixtures.

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Effects of Nitrogen Partial Pressure on the Properties of Al-Cr-N Films Prepared by DC Reactive Sputtering

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.55.271 ◽

2004 ◽

Vol 55 (4) ◽

pp. 271-275

Author(s):

Yukio IDE ◽

Satoshi NAKAMURA ◽

Akihiro NINO ◽

Katsuhiko KISHITAKE

Keyword(s):

Partial Pressure ◽

Reactive Sputtering ◽

Nitrogen Partial Pressure

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Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

Processing and Application of Ceramics ◽

10.2298/pac1701045n ◽

2017 ◽

Vol 11 (1) ◽

pp. 45-51 ◽

Cited By ~ 5

Author(s):

Mirjana Novakovic ◽

Maja Popovic ◽

Zlatko Rakocevic ◽

Natasa Bibic

Keyword(s):

Partial Pressure ◽

Phase Formation ◽

Rutherford Backscattering Spectrometry ◽

Deposition Process ◽

Columnar Structure ◽

Nitrogen Partial Pressure ◽

Tem Analysis ◽

Dense Microstructure ◽

Transmission Electron ◽

Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

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Effects of Nitrogen Partial Pressure Ratio and Anneal Temperature on the Properties of Al–N Co-Doped ZnO Thin Films

Journal of Electronic Materials ◽

10.1007/s11664-018-6294-6 ◽

2018 ◽

Vol 47 (8) ◽

pp. 4351-4355 ◽

Cited By ~ 2

Author(s):

Y. F. Wang ◽

L. D. Yu ◽

H. Y. Chen ◽

B. S. Li ◽

X. J. Wang ◽

...

Keyword(s):

Thin Films ◽

Partial Pressure ◽

Pressure Ratio ◽

Zno Thin Films ◽

Nitrogen Partial Pressure ◽

Doped Zno ◽

Anneal Temperature ◽

Partial Pressure Ratio ◽

Co Doped

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Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer

Materials Today Communications ◽

10.1016/j.mtcomm.2021.102923 ◽

2021 ◽

pp. 102923

Author(s):

Liyuan Peng ◽

Degang Zhao ◽

Feng Liang ◽

Wenjie Wang ◽

Zongshun Liu ◽

...

Keyword(s):

Partial Pressure ◽

Barrier Layer ◽

Nitrogen Partial Pressure ◽

Step Bunching

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Effect of nitrogen partial pressure on Al–Ti–N films deposited by arc ion plating

Applied Surface Science ◽

10.1016/j.apsusc.2011.10.053 ◽

2011 ◽

Vol 258 (5) ◽

pp. 1819-1825 ◽

Cited By ~ 45

Author(s):

Fei Cai ◽

Shihong Zhang ◽

Jinlong Li ◽

Zhong Chen ◽

Mingxi Li ◽

...

Keyword(s):

Partial Pressure ◽

Nitrogen Partial Pressure ◽

Arc Ion Plating ◽

Ion Plating

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On the gibbs energy interaction parameters of oxygen and nitrogen in liquid alloys

Metallurgical Transactions B ◽

10.1007/bf02653970 ◽

1979 ◽

Vol 10 (1) ◽

pp. 43-48 ◽

Cited By ~ 21

Author(s):

Y. A. Chang ◽

D. C. Hu

Keyword(s):

Gibbs Energy ◽

Interaction Parameters ◽

Liquid Alloys ◽

Energy Interaction

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Influences of oxygen impurity contained in nitrogen gas on the reactions of chromium with nitrogen

Journal of Materials Research ◽

10.1557/jmr.2005.0341 ◽

2005 ◽

Vol 20 (10) ◽

pp. 2745-2753 ◽

Cited By ~ 3

Author(s):

Yung-Shou Ho ◽

Fong-Shung Huang ◽

Fu-Hsing Lu

Keyword(s):

Oxygen Partial Pressure ◽

Partial Pressure ◽

Oxygen Impurity ◽

Nitrogen Gas ◽

Available Nitrogen ◽

Increasing Temperature ◽

Pressure Changes ◽

Annealing Experiments ◽

Simultaneous Dissolution

In this research, the influences of the oxygen impurity contained in the commercially available nitrogen gas on the reactions of chromium pellets with nitrogen were investigated in the temperature range 600–1350 °C. A small amount of oxygen competed with the majority N2 to react with chromium in the annealing process. Analyzing the in situ oxygen partial pressure changes during annealing proved that the dissolution of oxygen in Cr and/or resultant CrxN (CrN or Cr2N) was exothermic and the solubility decreased with increasing temperature. It was found that the oxygen partial pressure decreased drastically to about 10−22 atm when specimens were annealed at 600 °C compared to a mere 10−5 atm for a blank test, while its value increased with temperature. The oxidation involved simultaneous dissolution of oxygen in specimens and formation of oxide scale. Moreover, comparing the aforementioned results with those obtained from additional annealing experiments preformed in argon gas showed that the formation of Cr2O3 might stem mainly from oxidation of the resultant nitrides instead of the metallic chromium.

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