scholarly journals Fabrication and Characteristic of a Double Piezoelectric Layer Acceleration Sensor Based on Li-Doped ZnO Thin Film

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 331 ◽  
Author(s):  
Chunpeng Ai ◽  
Xiaofeng Zhao ◽  
Sen Li ◽  
Yi Li ◽  
Yinnan Bai ◽  
...  
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Piezoelectric Layer ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Test Results ◽  
Acceleration Sensor ◽  
Piezoelectric Layers ◽  
Mems Technology ◽  
Doped Zno

In this paper, a double piezoelectric layer acceleration sensor based on Li-doped ZnO (LZO) thin film is presented. It is constituted by Pt/LZO/Pt/LZO/Pt/Ti functional layers and a Si cantilever beam with a proof mass. The LZO thin films were prepared by radio frequency (RF) magnetron sputtering. The composition, chemical structure, surface morphology, and thickness of the LZO thin film were analyzed. In order to study the effect of double piezoelectric layers on the sensitivity of the acceleration sensor, we designed two structural models (single and double piezoelectric layers) and fabricated them by using micro-electro-mechanical system (MEMS) technology. The test results show that the resonance frequency of the acceleration sensor was 1363 Hz. The sensitivity of the double piezoelectric layer was 33.1 mV/g, which is higher than the 26.1 mV/g of single piezoelectric layer sensitivity, both at a resonance frequency of 1363 Hz.

Fabrication and characteristic of force sensor based on piezoelectric effect of Li-doped ZnO thin films

2018 ◽  
Vol 32 (18) ◽  
pp. 1850208 ◽  
Author(s):  
Chunpeng Ai ◽  
Xiaofeng Zhao ◽  
Yinan Bai ◽  
Yi Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
External Force ◽  
Piezoelectric Effect ◽  
Rf Magnetron Sputtering ◽  
Force Sensor ◽  
Micro Electro Mechanical System ◽  
Sem Analysis ◽  
Axis Orientation ◽  
Mems Technology ◽  
Doped Zno

In this paper, a force sensor based on piezoelectric effect of Li-doped ZnO (LZO) thin films was presented, which constituted by Pt/LZO/Pt/Ti functional layers and Si cantilever beam. The chips were designed and fabricated by micro electro-mechanical system (MEMS) technology on silicon wafer with [Formula: see text] orientation. In this sandwich structure, the top electrode (TE) was Pt and bottom electrode (BE) was Pt/Ti, LZO piezoelectric thin films were prepared by radio frequency (RF) magnetron sputtering method. The microstructure and morphology were analyzed through X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM), analysis results shows that the LZO thin films with highly c-axis orientation and uniform grain size distribution under sputtering power of 220 W. The experimental results show, when external force loaded on the tip of the beam, the output voltage [Formula: see text] was 280.3 mV at external force of 5 N, the sensitivity of the proposed sensor was 46.1 mV/N in the range of 1–5 N.

Application of V2O5 in Thin Film Microbatteries Prepared by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Unit Area ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mems Technology ◽  
Surface Morphologies ◽  
Sputtering System

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.

Effect of growth temperature on the properties of Al-doped ZnO thin film prepared by RF magnetron sputtering

2010 ◽  
Author(s):  
Zhou Yang ◽  
Hongfang Zheng ◽  
Xiaohong Li ◽  
Yingcai Peng ◽  
Qingxun Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Doped Zno

scholarly journals A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 589 ◽  
Author(s):  
Jian Yang ◽  
Meng Zhang ◽  
Yurong He ◽  
Yan Su ◽  
Guowei Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Resonance Frequency ◽  
Inertial Force ◽  
Relative Sensitivity ◽  
Micro Electro Mechanical Systems ◽  
Static State ◽  
Mems Accelerometer ◽  
Isotropic Etching ◽  
Mems Technology

In this paper, we report a novel aluminum nitride (AlN) thin-film piezoelectric resonant accelerometer. Different from the ordinary MEMS (micro-electro-mechanical systems) resonant accelerometers, the entire structure of the accelerometer, including the mass and the springs, is excited to resonate in-plane, and the resonance frequency is sensitive to the out-plane acceleration. The structure is centrosymmetrical with serpentine electrodes laid on supporting beams for driving and sensing. The stiffness of the supporting beams changes when an out-plane inertial force is applied on the structure. Therefore, the resonance frequency of the accelerometer will also change under the inertial force. The working principle is analyzed and the properties are simulated in the paper. The proposed AlN accelerometer is fabricated by the MEMS technology, and the structure is released by an ICP isotropic etching. The resonance frequency is 24.66 kHz at a static state. The quality factor is 1868. The relative sensitivity of this accelerometer, defined as the shift in the resonance frequency per gravity unit (1 g = 9.8 m/s2) is 346 ppm/g. The linearity of the accelerometer is 0.9988. The temperature coefficient of frequency (TCF) of this accelerometer is −2.628 Hz/°C (i.e., −106 ppm/°C), tested from −40 °C to 85 °C.

scholarly journals Characterization of Al-Doped ZnO Thin Film Grown on Buffer Layer with RF Magnetron Sputtering Method

2009 ◽  
Vol 18 (3) ◽  
pp. 213-220 ◽  
Author(s):  
Young-Soo No ◽  
Dong-Hee Park ◽  
Tae-Whan Kim ◽  
Ji-Won Choi ◽  
Won-Kook Choi
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Doped Zno
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