Spectral Characteristics of the Double-Folded Slot Antennas with Cold-Electron Bolometers for the 220/240 GHz Channels of the LSPE Instrument

We present the results of the experimental and theoretical study of the resonant properties and noise of a single cell of a receiving system based on cold-electron bolometers (CEB) with a double-folded slot antenna and coplanar lines. The system was designed to receive signals at 220/240 GHz frequencies with a 5% bandwidth. In measurements, we used the samples of the double-folded slot antennas with slot lengths of 162 um and coplanar line lengths from 185 to 360 um. Measurements of the resonance properties of CEB located at 0.3 K cryostat plate were carried out using a generator based on a high-temperature YBCO Josephson junction located inside the same cryostat at 4 K plate. This arrangement made it possible to obtain smooth amplitude-frequency characteristics with a clearly defined peak of a 15–21 GHz bandwidth at different frequencies. Based on these results, 2-D array of double-folded slot antennas with CEBs as 220/240 GHz LSPE channel prototype was calculated.The absorption efficiency of the array has reached 81% and 77% for 220 and 240 GHz channels, respectively.

Analysis and Two-Dimensional Modeling of Directional Coupler Based on Two Coplanar Lines

This chapter is dedicated to physical modeling and numerical characterization of directional coupler based on two coplanar lines using the general theory of coupled lines. The modeling in this chapter is two-dimensional due to the chosen numerical method (MOMs), for that purpose the analysis is divided into steps, we started by analyzing and modeling a micro-coplanar line in the quasi-TEM approximation using Green’s functions and the integral equation method then we conclude by using the telegraphist equations and the results of the first step to modeling a couple of micro-coplanar lines.

СЕКЦИЯ СВЧ-АТТЕНЮАТОРА НА ОСНОВЕ СВЧ МЭМ-КЛЮЧА С МЕДНОЙ МЕТАЛЛИЗАЦИЕЙ

Спроектирован и разработан СВЧ МЭМ-ключ до 25 ГГц на GaAs-подложке с медной металлизацией. Разработана технология корпусирования СВЧ МЭМ-ключа на уровне пластины, полностью совместимой с GaAs-технологией. Проведен расчет секции аттенюатора на основе СВЧ МЭМ-ключа в виде копланарной линии, по разработанной технологии изготовлена секция аттенюатора с коэффициентом ослабления 8 дБ на GaAs-подложке на основе СВЧ МЭМ-ключей. The paper highlights the RF MEMS switch up to 25 GHz on a GaAs substrate with copper metallization. A technology has been developed for packaging a RF MEMS switch at the wafer level, which is fully compatible with MMIC GaAs technology. The section of the attenuator based on the RF MEMS switch in the form of a coplanar line has been calculated, according to the developed technology, the section of the attenuator with the attenuation coefficient of 8dB on a GaAs substrate based on the RF MEMS switch has been manufactured.

A New Compact Coplanar Waveguide Stop Band Filter Based on Circular Shaped DGS for Microwave and Millimeters Wave Applications

This chapter introduces an overview of coplanar technology and the general techniques and process to improve the response and characteristics of microwave components. A new circular defected ground structure (DGS) with shaped coplanar line is investigated for compact stopband filter (SBF) for microwave and millimeter wave applications. With this structure, the response of resonant element in 20 GHz exhibits the bandstop function. The proposed DGS is also modified by introducing four symmetrical slots with L-configuration in conductor line of a coplanar circuit to improve separately the stopband and passband performances. An equivalent circuit model derived for the proposed structures will be provided.

Compact bandpass filter with wide-stopband using substrate integrated waveguide cavities and short-circuited coplanar line

This article presented a compact bandpass filter with wide-stopband performance. Two substrate integrated waveguide (SIW) cavities and a short-circuited coplanar line introduced between the two cavities are used to realize a compact third-order bandpass filter. The passband is generated by combining the resonant frequency of TE101 mode of the SIW cavities and the fundamental resonant frequency of the short-circuited coplanar line. The size of the proposed filter reduces significantly in comparison with conventional third-order SIW filters. Moreover, the center frequency (CF) and the bandwidth of the filter can be controlled by adjusting the structural parameters of the filter. In addition, the first higher-order mode TE102 of the SIW cavity is suppressed by minimizing the coupling of TE102 mode in order to obtain wide-stopband performance. The proposed filter is designed, fabricated, and measured, and the simulation and measurement results show a good agreement. The filter exhibits compact size, low loss, and a rejection higher than 20 dB up to 1.94f0.