scholarly journals Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 306
Author(s):  
Panagiotis Bousoulas ◽  
Charalampos Papakonstantinopoulos ◽  
Stavros Kitsios ◽  
Konstantinos Moustakas ◽  
Georgios Ch. Sirakoulis ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Bottom Electrode ◽  
Pt Nanoparticles ◽  
Low Power Consumption ◽  
Dense Layer ◽  
Bipolar Switching ◽  
Conductive Bridge ◽  
High Degree

The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.

26.3 Design of a Low Power Consumption a-IGZO TFT-based Vcom Driver Circuit with Long-Term Reliability

2011 ◽  
Vol 42 (1) ◽  
pp. 338-341 ◽  
Author(s):  
Hoon Jeong ◽  
Mallory Mativenga ◽  
Jin Jang ◽  
Sang Gul Lee ◽  
Yong Min Ha
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Driver Circuit ◽  
Igzo Tft

scholarly journals Metal–Oxide Nanowire Molecular Sensors and Their Promises

Chemosensors ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 41
Author(s):  
Hao Zeng ◽  
Guozhu Zhang ◽  
Kazuki Nagashima ◽  
Tsunaki Takahashi ◽  
Takuro Hosomi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
High Surface ◽  
Low Power Consumption ◽  
Ultra Low Power ◽  
Molecular Sensors ◽  
Term Stability ◽  
Long Term Stability

During the past two decades, one–dimensional (1D) metal–oxide nanowire (NW)-based molecular sensors have been witnessed as promising candidates to electrically detect volatile organic compounds (VOCs) due to their high surface to volume ratio, single crystallinity, and well-defined crystal orientations. Furthermore, these unique physical/chemical features allow the integrated sensor electronics to work with a long-term stability, ultra-low power consumption, and miniature device size, which promote the fast development of “trillion sensor electronics” for Internet of things (IoT) applications. This review gives a comprehensive overview of the recent studies and achievements in 1D metal–oxide nanowire synthesis, sensor device fabrication, sensing material functionalization, and sensing mechanisms. In addition, some critical issues that impede the practical application of the 1D metal–oxide nanowire-based sensor electronics, including selectivity, long-term stability, and low power consumption, will be highlighted. Finally, we give a prospective account of the remaining issues toward the laboratory-to-market transformation of the 1D nanostructure-based sensor electronics.

SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

2001 ◽  
Vol 11 (04) ◽  
pp. 1159-1248 ◽  
Author(s):  
D. FLANDRE ◽  
J.-P. RASKIN ◽  
D. VANHOENACKER-JANVIER
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Low Power Consumption ◽  
New Model ◽  
Microwave Applications ◽  
High Degree

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

Design of a low-power-consumption a-IGZO TFT-based Vcom driver circuit with long-term reliability

2011 ◽  
Vol 19 (11) ◽  
pp. 825 ◽  
Author(s):  
Hoon Jeong ◽  
Mallory Mativenga ◽  
Sang Gul Lee ◽  
Yong Min Ha ◽  
Jin Jang
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Driver Circuit ◽  
Igzo Tft

scholarly journals Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Electronics ◽  
2021 ◽  
Vol 10 (21) ◽  
pp. 2564
Author(s):  
Young Pyo Jeon ◽  
Yongbin Bang ◽  
Hak Ji Lee ◽  
Eun Jung Lee ◽  
Young Joon Yoo ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Future Generation ◽  
Information Storage ◽  
Low Power Consumption ◽  
Long Term Memory ◽  
Short Term ◽  
Memristive Device ◽  
Level Information

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.

Optimal design of a high homogeneous and small-size shim coil for atomic spin gyroscope based on 0-1 linear programming

2020 ◽  
Vol 64 (1-4) ◽  
pp. 165-172
Author(s):  
Dongge Deng ◽  
Mingzhi Zhu ◽  
Qiang Shu ◽  
Baoxu Wang ◽  
Fei Yang
Keyword(s):  
Linear Programming ◽  
Power Consumption ◽  
Low Power ◽  
Optimization Design ◽  
Structural Parameters ◽  
Axial Position ◽  
Low Power Consumption ◽  
Optimal Method ◽  
Atomic Spin ◽  
Shim Coil

It is necessary to develop a high homogeneous, low power consumption, high frequency and small-size shim coil for high precision and low-cost atomic spin gyroscope (ASG). To provide the shim coil, a multi-objective optimization design method is proposed. All structural parameters including the wire diameter are optimized. In addition to the homogeneity, the size of optimized coil, especially the axial position and winding number, is restricted to develop the small-size shim coil with low power consumption. The 0-1 linear programming is adopted in the optimal model to conveniently describe winding distributions. The branch and bound algorithm is used to solve this model. Theoretical optimization results show that the homogeneity of the optimized shim coil is several orders of magnitudes better than the same-size solenoid. A simulation experiment is also conducted. Experimental results show that optimization results are verified, and power consumption of the optimized coil is about half of the solenoid when providing the same uniform magnetic field. This indicates that the proposed optimal method is feasible to develop shim coil for ASG.

An Ultra-low Power Consumption MAC Protocol Complied with IEEE 802.15.4/4e for Wireless Smart Utility Networks

2016 ◽  
Vol 136 (11) ◽  
pp. 1555-1566 ◽  
Author(s):  
Jun Fujiwara ◽  
Hiroshi Harada ◽  
Takuya Kawata ◽  
Kentaro Sakamoto ◽  
Sota Tsuchiya ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Ieee 802.15.4 ◽  
Mac Protocol ◽  
Low Power Consumption ◽  
Ultra Low Power
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