scholarly journals Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Electronics ◽  
2021 ◽  
Vol 10 (21) ◽  
pp. 2564
Author(s):  
Young Pyo Jeon ◽  
Yongbin Bang ◽  
Hak Ji Lee ◽  
Eun Jung Lee ◽  
Young Joon Yoo ◽  
...  

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.

2011 ◽  
Vol 42 (1) ◽  
pp. 338-341 ◽  
Author(s):  
Hoon Jeong ◽  
Mallory Mativenga ◽  
Jin Jang ◽  
Sang Gul Lee ◽  
Yong Min Ha

Chemosensors ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 41
Author(s):  
Hao Zeng ◽  
Guozhu Zhang ◽  
Kazuki Nagashima ◽  
Tsunaki Takahashi ◽  
Takuro Hosomi ◽  
...  

During the past two decades, one–dimensional (1D) metal–oxide nanowire (NW)-based molecular sensors have been witnessed as promising candidates to electrically detect volatile organic compounds (VOCs) due to their high surface to volume ratio, single crystallinity, and well-defined crystal orientations. Furthermore, these unique physical/chemical features allow the integrated sensor electronics to work with a long-term stability, ultra-low power consumption, and miniature device size, which promote the fast development of “trillion sensor electronics” for Internet of things (IoT) applications. This review gives a comprehensive overview of the recent studies and achievements in 1D metal–oxide nanowire synthesis, sensor device fabrication, sensing material functionalization, and sensing mechanisms. In addition, some critical issues that impede the practical application of the 1D metal–oxide nanowire-based sensor electronics, including selectivity, long-term stability, and low power consumption, will be highlighted. Finally, we give a prospective account of the remaining issues toward the laboratory-to-market transformation of the 1D nanostructure-based sensor electronics.


2020 ◽  
Vol 984 ◽  
pp. 104-109
Author(s):  
Yu Han Yuan ◽  
Nasir Ilyas ◽  
Zhi Hui Qi ◽  
Dong Yang Li ◽  
Xiang Dong Jiang ◽  
...  

Recently, by inserting a TiOx thin layer, we have fabricated a memristive device as Pt/SiOx:Ag/TiOx/p++-Si which features a better bi-polar gradually resistive switching under positive and negative electrical bias. Different synaptic functions including potentiation, depression, short-term potentiation and the transition from short-term memory (STM) to long-term memory (LTM) using suitably programmed voltage pulse have been implemented successfully in the memristive device. It is indicated that the Pt/SiOx:Ag/TiOx/p++-Si memristor can be used as a promising emulator for biological synapse, which could have great potential for brain-inspired neuromorphic computing.


Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 306
Author(s):  
Panagiotis Bousoulas ◽  
Charalampos Papakonstantinopoulos ◽  
Stavros Kitsios ◽  
Konstantinos Moustakas ◽  
Georgios Ch. Sirakoulis ◽  
...  

The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.


Nanoscale ◽  
2022 ◽  
Author(s):  
Anyi Zheng ◽  
Tonghan Zhao ◽  
Xue Jin ◽  
Wangen Miao ◽  
Pengfei Duan

Circularly polarized luminescence (CPL) active materials have attracted exclusive attention because of their wide potential applications in low-power-consumption displays, encrypted information storage, chiroptical sensors, and so on. However, there is...


2011 ◽  
Vol 19 (11) ◽  
pp. 825 ◽  
Author(s):  
Hoon Jeong ◽  
Mallory Mativenga ◽  
Sang Gul Lee ◽  
Yong Min Ha ◽  
Jin Jang

2016 ◽  
Vol 39 ◽  
Author(s):  
Mary C. Potter

AbstractRapid serial visual presentation (RSVP) of words or pictured scenes provides evidence for a large-capacity conceptual short-term memory (CSTM) that momentarily provides rich associated material from long-term memory, permitting rapid chunking (Potter 1993; 2009; 2012). In perception of scenes as well as language comprehension, we make use of knowledge that briefly exceeds the supposed limits of working memory.


2020 ◽  
Vol 29 (4) ◽  
pp. 710-727
Author(s):  
Beula M. Magimairaj ◽  
Naveen K. Nagaraj ◽  
Alexander V. Sergeev ◽  
Natalie J. Benafield

Objectives School-age children with and without parent-reported listening difficulties (LiD) were compared on auditory processing, language, memory, and attention abilities. The objective was to extend what is known so far in the literature about children with LiD by using multiple measures and selective novel measures across the above areas. Design Twenty-six children who were reported by their parents as having LiD and 26 age-matched typically developing children completed clinical tests of auditory processing and multiple measures of language, attention, and memory. All children had normal-range pure-tone hearing thresholds bilaterally. Group differences were examined. Results In addition to significantly poorer speech-perception-in-noise scores, children with LiD had reduced speed and accuracy of word retrieval from long-term memory, poorer short-term memory, sentence recall, and inferencing ability. Statistically significant group differences were of moderate effect size; however, standard test scores of children with LiD were not clinically poor. No statistically significant group differences were observed in attention, working memory capacity, vocabulary, and nonverbal IQ. Conclusions Mild signal-to-noise ratio loss, as reflected by the group mean of children with LiD, supported the children's functional listening problems. In addition, children's relative weakness in select areas of language performance, short-term memory, and long-term memory lexical retrieval speed and accuracy added to previous research on evidence-based areas that need to be evaluated in children with LiD who almost always have heterogenous profiles. Importantly, the functional difficulties faced by children with LiD in relation to their test results indicated, to some extent, that commonly used assessments may not be adequately capturing the children's listening challenges. Supplemental Material https://doi.org/10.23641/asha.12808607


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