scholarly journals Fabrication Process for Deep Submicron SQUID Circuits with Three Independent Niobium Layers

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 350
Author(s):  
Silke Wolter ◽  
Julian Linek ◽  
Josepha Altmann ◽  
Thomas Weimann ◽  
Sylke Bechstein ◽  
...  
Keyword(s):  
Electron Beam ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Electron Beam Lithography ◽  
Chemical Mechanical Polishing ◽  
Quantum Interference ◽  
Deep Submicron ◽  
Normal Metal ◽  
Fabrication Technology ◽  
Superconducting Quantum Interference Devices

We present a fabrication technology for nanoscale superconducting quantum interference devices (SQUIDs) with overdamped superconductor-normal metal-superconductor (SNS) trilayer Nb/HfTi/Nb Josephson junctions. A combination of electron-beam lithography with chemical-mechanical polishing and magnetron sputtering on thermally oxidized Si wafers is used to produce direct current SQUIDs with 100-nm-lateral dimensions for Nb lines and junctions. We extended the process from originally two to three independent Nb layers. This extension offers the possibility to realize superconducting vias to all Nb layers without the HfTi barrier, and hence to increase the density and complexity of circuit structures. We present results on the yield of this process and measurements of SQUID characteristics.

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

Microwave Absorption of Magnetic Antidot Arrays

2010 ◽  
Vol 1248 ◽  
Author(s):  
Leszek M. Malkinski ◽  
Minghui Yu ◽  
Donald Scherer
Keyword(s):  
Electron Beam ◽  
Magnetron Sputtering ◽  
Microwave Absorption ◽  
Electron Beam Lithography ◽  
Dynamic Properties ◽  
Bias Field ◽  
Resonance Technique ◽  
Lift Off ◽  
Antidot Arrays ◽  
Feni Alloy

AbstractThree antidot arrays with FeNi alloy thickness of 20, 50 and 100 nm have been patterned using magnetron sputtering followed by the electron-beam lithography and lift-off technique. Ferromagnetic resonance technique was used to study dynamic properties of the antidot arrays. These results were compared with the measurements of continuous films with the same composition and thickness. Two distinct resonant fields have been observed for the bias field aligned with the edges of the square holes. Resonance peaks shifted towards each other and eventually merged when the in-plane bias field was rotated towards diagonal of the squares. This dependence has been explained in terms of magnetostatic energy associated with the square holes. The magnitude of this effect was decreasing for the arrays with the reduced thickness. The perpendicular and lateral quantized standing spin wave modes were detected in the reference films and the antidot arrays due to the perpendicular and lateral dimensional confinements.

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

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