Modeling of the Density of States in Field-Effect Zinc Oxide Semiconductor Devices Fabricated by Ultrasonic Spray Pyrolysis on Plastic Substrates
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In this work, using a physically based simulator, the modeling of the density of states (DOS) through the fitting of the electrical characteristics in field-effect devices is presented. The transfer characteristic of zinc oxide (ZnO) thin-film transistors is simulated, along with the capacitance–voltage curves in metal-insulator-semiconductor capacitors using ZnO as an active layer. The ZnO semiconductor devices were fabricated by high-frequency ultrasonic spray pyrolysis on polyethylene terephthalate plastic substrates. Different aspects were considered and discussed to model the device interfaces.
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2018 ◽
Vol 33
(6)
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pp. 065004
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2021 ◽
Vol 123
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pp. 105496
2016 ◽
Vol 5
(12)
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pp. Q284-Q288
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2009 ◽
Vol 206
(1)
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pp. 106-115
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2005 ◽
Vol 40
(8)
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pp. 1909-1915
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