Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement

The algorithmic spectrometry as an alternative to traditional approaches has the potential to become the next generation of infrared (IR) spectral sensing technology, which is free of physical optical filters, and only a very small number of data are required from the IR detector. A key requirement is that the detector spectral responses must be engineered to create an optimal basis that efficiently synthesizes spectral information. Light manipulation through metal perforated with a two-dimensional square array of subwavelength holes provides remarkable opportunities to harness the detector response in a way that is incorporated into the detector. Instead of previous experimental efforts mainly focusing on the change over the resonance wavelength by tuning the geometrical parameters of the plasmonic layer, we experimentally and numerically demonstrate the capability for the control over the shape of bias-tunable response spectra using a fixed plasmonic structure as well as the detector sensitivity improvement, which is enabled by the anisotropic dielectric constants of the quantum dots-in-a-well (DWELL) absorber and the presence of electric field along the growth direction. Our work will pave the way for the development of an intelligent IR detector, which is capable of direct viewing of spectral information without utilizing any intervening the spectral filters.

Download Full-text

Giant Stark effect in quantum dots at liquid/liquid interfaces: A new option for tunable optical filters

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.0807427105 ◽

2008 ◽

Vol 105 (47) ◽

pp. 18212-18214 ◽

Cited By ~ 23

Author(s):

M. E. Flatte ◽

A. A. Kornyshev ◽

M. Urbakh

Keyword(s):

Quantum Dots ◽

Stark Effect ◽

Optical Filters ◽

Liquid Interfaces ◽

Tunable Optical Filters

Download Full-text

Effect of Doped Substrate on GaAs–AlGaAs Interfacial Workfunction IR Detector Response Through Cavity Effect

IEEE Transactions on Electron Devices ◽

10.1109/ted.2005.843876 ◽

2005 ◽

Vol 52 (3) ◽

pp. 413-418

Author(s):

S.G. Matsik ◽

M.B.M. Rinzan ◽

D.G. Esaev ◽

A.G.U. Perera ◽

G. vonWinckel ◽

...

Keyword(s):

Detector Response ◽

Ir Detector ◽

Cavity Effect

Download Full-text

Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

Journal of Nanomaterials ◽

10.1155/2015/937310 ◽

2015 ◽

Vol 2015 ◽

pp. 1-9 ◽

Cited By ~ 2

Author(s):

Guangxin Wang ◽

Xiuzhi Duan ◽

Wei Chen

Keyword(s):

Quantum Dots ◽

Hydrostatic Pressure ◽

Binding Energy ◽

Effective Mass ◽

Dielectric Constants ◽

Pressure Effects ◽

Physical Parameters ◽

Barrier Thickness ◽

Hydrogenic Impurity ◽

Donor Binding Energy

Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic impurity are investigated in wurtzite (WZ) GaN/AlxGa1−xN strained quantum dots (QDs) by means of a variational approach. The hydrostatic pressure dependence of physical parameters such as electron effective mass, energy band gaps, lattice constants, and dielectric constants is considered in the calculations. Numerical results show that the donor binding energy for any impurity position increases when the hydrostatic pressure increases. The donor binding energy for the impurity located at the central of the QD increases firstly and then begins to drop quickly with the decrease of QD radius (height) in strong built-in electric fields. Moreover, the influence of barrier thickness along the QD growth direction and Al concentration on donor binding energy is also investigated. In addition, we also found that impurity positions have great influence on the donor binding energy.

Download Full-text

Interacting functionally graded quantum wires/quantum dots with arbitrary shapes and general anisotropy within a distinct piezoelectric matrix

Journal of the Mechanical Behavior of Materials ◽

10.1515/jmbm-2014-0001 ◽

2014 ◽

Vol 23 (1-2) ◽

pp. 1-14 ◽

Cited By ~ 2

Author(s):

Hossein M. Shodja ◽

Ehsan Rashidinejad

Keyword(s):

Quantum Dots ◽

Quantum Wires ◽

Rotational Symmetry ◽

Accurate Determination ◽

Transversely Isotropic ◽

Functionally Graded ◽

Dielectric Constants ◽

Arbitrary Distribution ◽

Equivalent Inclusion Method ◽

Arbitrary Shapes

AbstractAn accurate determination of the two- and three-dimensional electro-elastic fields of periodically as well as arbitrarily distributed interacting quantum wires (QWRs) and interacting quantum dots (QDs) of arbitrary shapes within a piezoelectric matrix is of particular interest. Both the QWR/QD and the barrier may be made of materials with distinct general rectilinear anisotropy in elastic, piezoelectric, and dielectric constants. The lattice mismatch between the QWR/QD and the barrier is accounted by prescribing an initial misfit strain field within the QWR/QD. Previous analytical treatments have neglected the distinction between the electro-mechanical properties of the QWR/QD and those of the barrier. This simplifying assumption is circumvented in the present work by using a novel electro-mechanical equivalent inclusion method in Fourier space (FEMEIM). Moreover, the theory can readily treat cases where the QWRs/QDs are multiphase or functionally graded (FG). It was proven that for two-dimensional problems of either a periodic or an arbitrary distribution of FG QWRs in a transversely isotropic piezoelectric barrier, the elastic and electric fields are electrically and elastically impotent, respectively, and no electric field would be induced in the medium provided that the rotational symmetry and polarization axes coincide. Some numerical examples of more frequent shapes and different distributions of indium nitride QDs/QWRs within transversely isotropic aluminum nitride barrier are solved.

Download Full-text

Modeling and experimental results of low-background extrinsic double-injection IR detector response

10.1117/12.665231 ◽

2006 ◽

Author(s):

N. B. Zaletaev ◽

A. M. Filachev ◽

V. P. Ponomarenko ◽

V. I. Stafeev

Keyword(s):

Experimental Results ◽

Detector Response ◽

Ir Detector ◽

Low Background ◽

Double Injection

Download Full-text

Optical transmission through metallic split-ring resonator with inner cross dimer array

Modern Physics Letters B ◽

10.1142/s021798491650353x ◽

2016 ◽

Vol 30 (29) ◽

pp. 1650353 ◽

Cited By ~ 1

Author(s):

Xin Zhou ◽

Min Ouyang ◽

Zhibing Wang ◽

Diwu Yang ◽

Jun He

Keyword(s):

Optical Properties ◽

Ring Resonator ◽

Fdtd Method ◽

Split Ring Resonator ◽

Dielectric Constants ◽

Geometrical Parameters ◽

Split Ring ◽

Physical Mechanisms ◽

Electric And Magnetic Fields ◽

Length Width

We investigate numerically the optical properties through gold split-ring resonator (SRR) with inner cross dimer array by using the finite difference time domain (FDTD) method. The dependence of the geometrical parameters on the optical properties of SRR with inner cross dimer array is studied. The study covers the change of transmission spectra with the metallic cross arm length, width of air slits, width of SRRs and environmental dielectric constants. The spatial distributions of the electric and magnetic fields are also discussed to further understand more basic physical mechanisms behind some dip and peak.

Download Full-text

Patterned Optical Filters To Encode Spectral Information For Solid State Imaging Devices

10.1117/12.955638 ◽

1977 ◽

Author(s):

John Murphy

Keyword(s):

Solid State ◽

Optical Filters ◽

Spectral Information

Download Full-text

Dielectric Constants of Silicon Quantum Dots

Physical Review Letters ◽

10.1103/physrevlett.73.1039 ◽

1994 ◽

Vol 73 (7) ◽

pp. 1039-1042 ◽

Cited By ~ 292

Author(s):

Lin-Wang Wang ◽

Alex Zunger

Keyword(s):

Quantum Dots ◽

Dielectric Constants ◽

Silicon Quantum Dots

Download Full-text

Ultrafast IR detector response in high Tc superconducting thin films

Physica Scripta ◽

10.1088/0031-8949/44/1/016 ◽

1991 ◽

Vol 44 (1) ◽

pp. 105-107 ◽

Cited By ~ 1

Author(s):

Mikael Lindgren ◽

Henrik Ahlberg ◽

Anders Larsson ◽

Sverre T Eng ◽

Martin Danerud

Keyword(s):

Thin Films ◽

Detector Response ◽

Superconducting Thin Films ◽

Ir Detector ◽

High Tc

Download Full-text

Properties of Reactively Sputter Deposited SrTiO3 Films for IR Detector Readout Electronics

MRS Proceedings ◽

10.1557/proc-361-595 ◽

1994 ◽

Vol 361 ◽

Author(s):

S.D. Bernstein ◽

T.Y. Wong ◽

J.K. Rawson ◽

R.W. Tustison

Keyword(s):

Oxygen Partial Pressure ◽

Partial Pressure ◽

Integrated Circuit ◽

Room Temperature ◽

Dielectric Constants ◽

Ir Detector ◽

Capacitance Density ◽

Pt Electrodes ◽

Temperature Deposition ◽

Sputter Deposited

ABSTRACTThe effects of film thickness, oxygen partial pressure, electrode type, substrate temperature, and position on the room temperature and 77 K dielectric properties of SrTiO3 (ST) films were studied. The film composition and properties vary with radial position and oxygen partial pressure. A maximum in dielectric constant occurs near the same position where stoichiometric films are obtained. The room temperature and 77K dielectric constants increase with increasing thickness, while the capacitance density decreases. Capacitance densities as high as 4 fF/μm2 were observed for films deposited at low temperature and subsequently crystallized. Elevated temperature deposition, however, results in better properties than room temperature deposition followed by annealing. Dielectric constants as high as 200 with capacitance densities up to 9 fF/μ2 were observed. For optimized deposition conditions, no dielectric break-down of the capacitors was observed at 20V after 111 days of testing. The properties of capacitors with n+Si bottom electrodes were not as good as those with Ti/Pt electrodes, however, integration with Si integrated circuit processing is expected to be much simpler.

Download Full-text