scholarly journals Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 624
Author(s):  
Amnon Rothman ◽  
Jaroslav Maniš ◽  
Vladimir G. Dubrovskii ◽  
Tomáš Šikola ◽  
Jindřich Mach ◽  
...  
Keyword(s):  
Physical Properties ◽  
Growth Mechanism ◽  
Growth Kinetics ◽  
General Model ◽  
Rational Approach ◽  
Thomson Effect ◽  
Guided Growth ◽  
Gan Nanowires ◽  
Kinetics Of ◽  
Structure Orientation

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

2009 ◽  
Vol 24 (9) ◽  
pp. 095019 ◽  
Author(s):  
Changgang Huang ◽  
Meili Wang ◽  
Quanlin Liu ◽  
Yongge Cao ◽  
Zhonghua Deng ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Physical Properties ◽  
Growth Kinetics ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide ◽  
Kinetics Of

Scaling growth kinetics of self-induced GaN nanowires

2012 ◽  
Vol 100 (15) ◽  
pp. 153101 ◽  
Author(s):  
Vladimir G. Dubrovskii ◽  
Vincent Consonni ◽  
Lutz Geelhaar ◽  
Achim Trampert ◽  
Henning Riechert
Keyword(s):  
Growth Kinetics ◽  
Gan Nanowires ◽  
Kinetics Of

Correlation between the Microstructure, Growth Mechanism, and Growth Kinetics of Alumina Scales on a FeCrAlY Alloy

2007 ◽  
Vol 38 (12) ◽  
pp. 2974-2983 ◽  
Author(s):  
D. Naumenko ◽  
B. Gleeson ◽  
E. Wessel ◽  
L. Singheiser ◽  
W.J. Quadakkers
Keyword(s):  
Growth Mechanism ◽  
Growth Kinetics ◽  
Alumina Scales ◽  
Kinetics Of

Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

2012 ◽  
Vol 47 (4) ◽  
pp. 952-956 ◽  
Author(s):  
Chandan Samanta ◽  
D. Sathish Chander ◽  
J. Ramkumar ◽  
S. Dhamodaran
Keyword(s):  
Growth Kinetics ◽  
Gan Nanowires ◽  
Dependent Growth ◽  
Kinetics Of

Dopant Effects On The Kinetics Of Formation Of Platinum Silicides

1985 ◽  
Vol 54 ◽  
Author(s):  
M. Wittmer ◽  
P. A. Psaras ◽  
K. N. Tu
Keyword(s):  
Activation Energy ◽  
Growth Mechanism ◽  
Growth Kinetics ◽  
Silicon Substrate ◽  
Polycrystalline Silicon ◽  
Preexponential Factor ◽  
Substrate Material ◽  
Published Data ◽  
Kinetics Of Formation ◽  
Kinetics Of

ABSTRACTWe have investigated the growth kinetics of platinum suicide compounds on undoped and heavily arsenic doped polycrystalline silicon. The results are compared with published data on the growth kinetics of these suicides on other silicon substrate materials. From this comparison we conclude that dopants and the microstructure of the substrate material do not affect the activation energy of the growth kinetics which means that the growth mechanism of these suicides is not altered. Only the preexponential factor is lowered in some cases, pointing to a slowing of the speed of growth.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of
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