scholarly journals Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2703
Author(s):  
Hans Georg Babin ◽  
Julian Ritzmann ◽  
Nikolai Bart ◽  
Marcel Schmidt ◽  
Timo Kruck ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Charge State ◽  
Molecular Beam ◽  
Surface Coverage ◽  
Matrix Material ◽  
Diode Structure ◽  
Photonic Structure ◽  
The Matrix ◽  
Insight Into

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

Growth and Characterization of Inas Quantum Dots on Silicon

1999 ◽  
Vol 583 ◽  
Author(s):  
L. Hansen ◽  
A. Ankudinov ◽  
F. Bensing ◽  
J. Wagner ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Material System ◽  
Inas Quantum Dots ◽  
New Material ◽  
The One ◽  
Insight Into

AbstractUp to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

InAs/AlGaAs quantum dots grown by a novel molecular beam epitaxy multistep design for intermediate band solar cells: physical insight into the structure, composition, strain and optical properties

CrystEngComm ◽  
2019 ◽  
Vol 21 (31) ◽  
pp. 4644-4652 ◽  
Author(s):  
Antonietta Taurino ◽  
Massimo Catalano ◽  
Moon J. Kim ◽  
Vittorianna Tasco ◽  
Iolena Tarantini ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Physical Insight ◽  
Insight Into

Structural, chemical and strain assessment of In-based quantum dots grown by a peculiar multistep MBE process, for application in intermediate band solar cells (IBSCs).

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Molecular beam epitaxy based growth of cubic GaN quantum dots

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

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