scholarly journals Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal
Keyword(s):  
Low Power ◽  
Work Function ◽  
Potential Candidate ◽  
Gate Electrodes ◽  
The Future ◽  
Work Function Difference ◽  
High Transconductance ◽  
Dual Material ◽  
Gate Work Function ◽  
Function Difference

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

Molybdenum Gate Electrode Technology For Deep Sub-Micron CMOS Generations

2001 ◽  
Vol 670 ◽  
Author(s):  
Pushkar Ranade ◽  
Ronald Lin ◽  
Qiang Lu ◽  
Yee-Chia Yeo ◽  
Hideki Takeuchi ◽  
...  
Keyword(s):  
Work Function ◽  
Cmos Technology ◽  
Potential Candidate ◽  
Gate Electrode ◽  
Metal Gate Electrodes ◽  
Gate Electrodes ◽  
Dielectric Interfaces ◽  
Nitrogen Ions ◽  
Metal Work ◽  
Gate Work Function

ABSTRACTContinued scaling of CMOS technology beyond the 100 nm technology node will rely on fundamental changes in transistor gate stack materials [1]. Refractory metals and their metallic derivatives are among the only candidates suitable for use as transistor gate electrodes. In earlier publications, Mo has been proposed as a potential candidate for use as a MOSFET gate electrode and the implantation of nitrogen ions into the Mo film has been observed to lower the interfacial work function of Mo [2,3]. This observation indicates the potential application of Mo as a CMOS gate electrode. In this paper, the dependence of the interfacial work function on the nitrogen implant parameters (viz. energy and dose) is discussed. In general, metal work functions at dielectric interfaces depend on the permittivity of the dielectric [3,4,5]. This dependence of the gate work function on dielectric permittivity presents a significant challenge for the integration of metal gate electrodes into future CMOS technology. In light of this, the ability to engineer the Mo gate work function over a relatively large range makes it an attractive candidate for this application.

Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors

1992 ◽  
Vol 258 ◽  
Author(s):  
D.R. Lee ◽  
G. Lucovsky
Keyword(s):  
Work Function ◽  
Mos Capacitors ◽  
Si Substrates ◽  
Gate Electrodes ◽  
Type C ◽  
Work Function Difference ◽  
Si Films ◽  
P Type ◽  
Mos Device ◽  
Function Difference

ABSTRACTWe have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.

scholarly journals Work function difference of naphthyl end-capped oligothiophene in different crystal alignments studied by Kelvin probe force microscopy

2020 ◽  
pp. 106060
Author(s):  
Mads Nibe Larsen ◽  
Mads Svanborg Peters ◽  
Rodrigo Lemos-Silva ◽  
Demetrio A. Da Silva Filho ◽  
Bjarke Jørgensen ◽  
...  
Keyword(s):  
Work Function ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Work Function Difference ◽  
Function Difference

Measurement of work function difference between Pb/Si(111) and Pb/Ge/Si(111) by high-order Gundlach oscillation

2013 ◽  
Vol 114 (21) ◽  
pp. 214308 ◽  
Author(s):  
Hsu-Sheng Huang ◽  
Wen-Yuan Chan ◽  
Wei-Bin Su ◽  
Germar Hoffmann ◽  
Chia-Seng Chang
Keyword(s):  
Work Function ◽  
High Order ◽  
Work Function Difference ◽  
Function Difference

Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses

Nanoscale ◽  
2020 ◽  
Vol 12 (15) ◽  
pp. 8216-8229
Author(s):  
Hong-Ki Kim ◽  
Soo In Kim ◽  
Seongjun Kim ◽  
Nam-Suk Lee ◽  
Hoon-Kyu Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Structural Properties ◽  
Epitaxial Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Spectroscopic Analyses ◽  
Work Function Difference ◽  
Function Difference

In the defective SiC epitaxial layer, the work function variation was observed by Kelvin probe force microscopy (KPFM), and the work function difference came from the variation of polytype and the disordered surface.

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