AbstractDeep UV detection using a single crystal diamond (SCD) substrate without a homoepitaxial layer has been demonstrated using a defect passivation treatment. Despite evidence of surface damage on the SCD, the treatments lead to highly effective photoconductive devices, displaying six-orders of discrimination between deep UV and visible light and a responsivity as high as 100A/W, equivalent to an external quantum efficiency of 700, similar to the best values for devices based on high quality homoepitaxial layers. Impedance spectroscopic investigations suggest that the treatment used reduces the impact of less resistive surface material, most likely defects left from substrate polishing.
High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets