scholarly journals Titania Nanotubes/Hydroxyapatite Nanocomposites Produced with the Use of the Atomic Layer Deposition Technique: Estimation of Bioactivity and Nanomechanical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 123 ◽  
Author(s):  
Aleksandra Radtke ◽  
Michalina Ehlert ◽  
Tomasz Jędrzejewski ◽  
Beata Sadowska ◽  
Marzena Więckowska-Szakiel ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
Atomic Layer Deposition ◽  
Bacterial Colonization ◽  
Atomic Layer ◽  
Biomechanical Properties ◽  
Titania Nanotubes ◽  
Implant Surface ◽  
Novel Approach ◽  
Layer Deposition ◽  
Number Of Cycles

Titanium dioxide nanotubes/hydroxyapatite nanocomposites were produced on a titanium alloy (Ti6Al4V/TNT/HA) and studied as a biocompatible coating for an implant surface modification. As a novel approach for this type of nanocomposite fabrication, the atomic layer deposition (ALD) method with an extremely low number of cycles was used to enrich titania nanotubes (TNT) with a very thin hydroxyapatite coating. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for determination of the structure and the surface morphology of the fabricated nanocoatings. The biointegration activity of the layers was estimated based on fibroblasts’ proliferation on the TNT/HA surface. The antibacterial activity was determined by analyzing the ability of the layers to inhibit bacterial colonization and biofilm formation. Mechanical properties of the Ti6Al4V/TNT/HA samples were estimated by measuring the hardness, Young’s module, and susceptibility to scratching. The results revealed that the nanoporous titanium alloy coatings enriched with a very thin hydroxyapatite layer may be a promising way to achieve the desired balance between biofunctional and biomechanical properties of modern implants.

Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

2009 ◽  
Vol 1156 ◽  
Author(s):  
Sun Kyung Park ◽  
K. Roodenko ◽  
Yves J. Chabal ◽  
L. Wielunski ◽  
R. Kanjolia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Experimental Conditions ◽  
Metallic Component ◽  
Broadband Absorption ◽  
Lorentz Oscillator ◽  
Layer Deposition ◽  
Drude Term ◽  
Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

A novel approach for fabrication of bismuth-silicon dioxide core-shell structures by atomic layer deposition

2009 ◽  
Vol 19 (38) ◽  
pp. 7050 ◽  
Author(s):  
Jongmin Lee ◽  
Shadyar Farhangfar ◽  
Renbin Yang ◽  
Roland Scholz ◽  
Marin Alexe ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Shell Structures ◽  
Core Shell ◽  
Novel Approach ◽  
Layer Deposition

Atomic Layer Deposition of Zirconium Oxide for Fuel Cell Applications

2012 ◽  
Vol 5 (1) ◽  
Author(s):  
C. James ◽  
R. Xu ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Fuel Cells ◽  
Atomic Layer Deposition ◽  
Solid Oxide Fuel Cells ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Electrolyte Layer ◽  
Constant Growth Rate ◽  
Layer Deposition ◽  
Number Of Cycles ◽  
Constant Growth

Solid oxide fuel cells (SOFCs) are an intriguing renewable energy source. Most SOFCs operate at high temperatures, around 1000 °C. One of the problems with them operating at lower temperatures is that it increases the resistance in the electrolyte layer. The focus of this project is to increase the efficiency of the electrolyte layer at the lower temperatures by decreasing the thickness of the electrolyte layer, in order to decrease the ionic resistance. Atomic layer deposition (ALD) was used to deposit zirconium oxide, which is one of the promising components of electrolytes in small length scale fuel cells; the zirconium precursor was Tris(dimethylamino)cyclopentadienylZirconium (ZyALD) and the oxidant was 0.1 % O3 in O2. Spectroscopic ellipsometry was used to measure the thickness of the samples was. This paper also describes how ALD was used to vary the thickness from 32 Å to 135 Å. Our results showed that there was a constant growth rate of 0.87 ± 0.04 Å/cycle, which can be used to control the film thickness. The error was calculated by taking the standard deviation of the growth rates for a varied number of cycles that were run.

scholarly journals Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 572
Author(s):  
Sang-Soon Lim ◽  
Kwang-Chon Kim ◽  
Seunghyeok Lee ◽  
Hyung-Ho Park ◽  
Seung-Hyub Baek ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
Atomic Layer ◽  
Thermoelectric Performance ◽  
Fine Powders ◽  
Plasma Sintering ◽  
Novel Approach ◽  
Layer Deposition ◽  
Spark Plasma ◽  
Precursor Powders

The carrier concentration in Bi2Te3-based alloys is a decisive factor in determining their thermoelectric performance. Herein, we propose a novel approach to modulate the carrier concentration via the encapsulation of the alloy precursor powders. Atomic layer deposition (ALD) of ZnO and SnO2 was performed over the Bi2Te2.7Se0.3 powders. After spark plasma sintering at 500 °C for 20 min, the carrier concentration in the ZnO-coated samples decreased, while the carrier concentration in the SnO2-coated samples increased. This trend was more pronounced as the number of ALD cycles increased. This was attributed to the intermixing of the metal ions at the interface. Zn2+ substituted for Bi3+ at the interface acted as an acceptor, while Sn4+ substituted for Bi3+ acted as a donor. This indicates that the carrier concentration can be adjusted depending on the materials deposited with ALD. The use of fine powders changes the carrier concentration more strongly, because the quantity of material deposited increases with the effective surface area. Therefore, the proposed approach would provide opportunities to precisely optimize the carrier concentration for high thermoelectric performance.

scholarly journals Ligand-induced reduction concerted with coating by atomic layer deposition on the example of TiO2-coated magnetite nanoparticles

2019 ◽  
Vol 10 (7) ◽  
pp. 2171-2178 ◽  
Author(s):  
Sarai García-García ◽  
Alberto López-Ortega ◽  
Yongping Zheng ◽  
Yifan Nie ◽  
Kyeongjae Cho ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Magnetite Nanoparticles ◽  
Atomic Layer ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Metal Source ◽  
Novel Approach ◽  
Layer Deposition ◽  
Core Shell Nanoparticles

An appropriate atomic layer deposition precursor, as a function of the ligand of the metal source, can unveil a novel approach to concertedly coat and reduce γ-Fe2O3 nanoparticles to form Fe3O4/TiO2 core/shell nanoparticles.

Atomic Layer Deposition of Tin Thin Films by Sequential Introduction of Ti Precursor and NH3

1998 ◽  
Vol 514 ◽  
Author(s):  
Jae-Sik Min ◽  
Young-Woong Son ◽  
Won-Gu Kang ◽  
Sang-Won Kang
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Atomic Layer ◽  
Gas Phase Reactions ◽  
Carbon Impurity ◽  
Layer Deposition ◽  
Tin Thin Films ◽  
Number Of Cycles ◽  
Ar Gas ◽  
The Ideal

ABSTRACTAtomic layer deposition(ALD) of amorphous TiN films on SiO2 between 170°C and 210°C has been investigated by alternate supply of reactant sources, Ti[N(C2H5CH3)2]4 [tetrakis(ethylmethylamino)titanium : TEMAT] and NH3. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, NH3 gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 0.5 nrm/cycle with sufficient pulse time of TEMAT at 200°C. The ideal linear relationship between number of cycles and film thickness is confirmed. As a result of surface limited reactions of ALD, step coverage was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was separated from NH3 by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4at%.

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