scholarly journals Bias-Modulated High Photoelectric Response of Graphene-Nanocrystallite Embedded Carbon Film Coated on n-Silicon

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 327 ◽  
Author(s):  
Xi Zhang ◽  
Zezhou Lin ◽  
Da Peng ◽  
Dongfeng Diao

We propose that bias-modulated graphene-nanocrystallites (GNs) grown vertically can enhance the photoelectric property of carbon film coated on n-Si substrate. In this work, GN-embedded carbon (GNEC) films were deposited by the electron cyclotron resonance (ECR) sputtering technique. Under a reverse diode bias which lifts the Dirac point of GNs to a higher value, the GNEC film/n-Si device achieved a high photocurrent responsivity of 0.35 A/W. The bias-modulated position of the Dirac point resulted in a tunable ON/OFF ratio and a variable spectral response peak. Moreover, due to the standing structured GNs keeping the transport channels, a response time of 2.2 μs was achieved. This work sheds light on the bias-control wavelength-sensitive photodetector applications.

2000 ◽  
Vol 14 (02n03) ◽  
pp. 309-314
Author(s):  
S. F. YOON ◽  
Q. F. HUANG ◽  
RUSLI ◽  
H. YANG ◽  
J. AHN ◽  
...  

Metal-containing carbon (Me-C:H) films are presently attracting wide interests due to their unique properties such as good adhesion, low resistivity and friction value. As a result, numerous techniques for depositing such films have been proposed. In this paper, a novel technique which involves the incorporation of two molybdenum (Mo) screen grids embedded in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system is presented. A set of film deposition experiments based on this screen grid sputtering technique has been carried out. The Mo-containing carbon films were charcterized using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS). The changes in film resistivity were evaluated as a function of changes in the gas flow ratio ( CH 4/ Ar ). XPS analysis showed that the fraction of Mo incorpated in the carbon film decreases drastically from 15.11% to 0.32% following an increase in the CH4/AR flow ratio. The film resistivity was found to increase by 11 orders of magnitude following the decrease in the metal fraction. It is found that Mo can exist in the forms of MoC, Mo 2 C , Mo, and even MoO 3 in the films, the last being mainly due to air exposure. The results showed that our ECR-based screen grid deposition technique for Me-C:H is highly effective and flexible with good control over the amount of metal incorporated.


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