scholarly journals Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1618 ◽  
Author(s):  
Karsenty ◽  
Mottes
Keyword(s):  
Integrated Circuits ◽  
Hall Effect ◽  
Feasibility Analysis ◽  
Analytical Models ◽  
Nanoscale Device ◽  
High Frequencies ◽  
New Device ◽  
Very High Frequencies ◽  
Very High ◽  
Hand Modeling

HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry working at very high frequencies (tens of Tera-Hertz). The architecture, design, and simulations were performed while using Comsol Multi-Physics Package Software. Complementary accurate analytical models were developed to support the understanding of the device functionality, including treatment of specific phenomena, such as heat transfer, and mega-magnet feasibility inside integrated circuits. This new device, combining both the Hall Effect and nanoscale dimensions, holds the potential to change the computing rates in the microelectronics circuitry world, and can serve as a game changer.

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

An ammeter for very high frequencies

1930 ◽  
Vol 68 (401) ◽  
pp. 556-559
Author(s):  
C.L. Fortescue ◽  
L.A. Moxon
Keyword(s):  
High Frequencies ◽  
Very High Frequencies ◽  
Very High

scholarly journals Idiotypic analysis of potential and available repertoires in the arsonate system.

1984 ◽  
Vol 160 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M Slaoui ◽  
O Leo ◽  
J Marvel ◽  
M Moser ◽  
J Hiernaux ◽  
...  
Keyword(s):  
Monoclonal Antibody ◽  
B Cells ◽  
Keyhole Limpet Hemocyanin ◽  
High Frequencies ◽  
Specific Subset ◽  
A Minor ◽  
Very High Frequencies ◽  
Very High ◽  
Limiting Dilution

We have shown that, by suitable idiotypic manipulation, BALB/c mice can express the major cross-reactive idiotype (CRI) of A/J mice in response to azophenylarsonate (Ars). In order to know if the CRIA idiotype is present in the potential repertoire of BALB/c before any intentional selection, we used polyclonal activation in vitro and limiting dilution analysis. The readout was done with two monoclonal anti-CRIA antibodies that recognize distinct idiotopes on a CRIA+ A/J germline-encoded monoclonal antibody. We studied the frequency of CRIA+ lipopolysaccharide (LPS)-reactive cells in the spleens of nonimmune and immune A/J mice and in the spleens of naive and manipulated (i.e., producing CRIA+ antibodies) BALB/c mice. A/J and BALB/c naive individuals presented very high frequencies of Ars-specific B cells while the frequency of CRIA+ B cells was only a minor subset (0.5%) of the total Ars-specific subset in the two strains. When A/J mice were immunized with Ars-keyhole limpet hemocyanin, a clear preferential expansion of the CRIA+ minor subset of A/J mice was observed (100x). No such enhancement was observed in BALB/c mice similarly treated. Manipulated BALB/c mice presented a higher frequency of CRIA+ anti-Ars B cells than naive or antigen-immunized BALB/c individuals.

Suitable Conditions for Effective Inter Chip Communication based on Surface Wave Phenomenon

2021 ◽  
Vol 14 ◽  
Author(s):  
Mahaveer Penna ◽  
Shiva Shankar ◽  
Keshava Murthy ◽  
Jijesh J J
Keyword(s):  
Surface Wave ◽  
Integrated Circuits ◽  
Electromagnetic Waves ◽  
Printed Circuit Boards ◽  
Analytical Models ◽  
Circuit Boards ◽  
High Frequencies ◽  
Printed Circuit ◽  
High Data ◽  
Low Dispersion

Background: The communication between two Integrated Circuits (IC) of the Printed Circuit Boards (PCB) currently happening through copper traces which allow electric charge to flow. Several limitations being encountered with the copper traces during high data rate communication because of the resistivity factors, which eventually leads to the damage of traces and the system. Methods: The solution for this issue comes with the design of surface wave communication-based waveguide/channel between the IC’s. Surface wave communication over a specified communication fabric/channel performs the propagation of electromagnetic waves effectively even at high frequencies compared to the copper traces using conductor-dielectric combination. This paper deals in revealing suitable conditions through profound analytical models for achieving effective surface wave communication between the pins of integrated circuits. Results: The analysis includes defining the possible wave propagation terms, suitable channel design aspects for PCB application and corresponding analysis for effective communication at frequencies from 50GHz to 500GHz of millimeter range. This study provides the roadmap to explore a deterministic channel/fabric for pin to pin communication between the IC’s as an alternate for the copper traces. Conclusion: In this process, the proposed channel achieves low dispersion compared to the copper traces at millimeter frequency range.

A Genetically Marked I Element in Drosophila melanogaster Can Be Mobilized When ORF2 Is Provided in trans

Genetics ◽  
1998 ◽  
Vol 148 (1) ◽  
pp. 267-275
Author(s):  
Isabelle Busseau ◽  
Sophie Malinsky ◽  
Maria Balakireva ◽  
Marie-Christine Chaboissier ◽  
Danielle Teninges ◽  
...  
Keyword(s):  
Drosophila Melanogaster ◽  
Heat Shock ◽  
Reverse Transcriptase ◽  
Germ Line ◽  
Ltr Retrotransposons ◽  
Low Frequencies ◽  
High Frequencies ◽  
In Trans ◽  
Very High Frequencies ◽  
Very High

Abstract I factors in Drosophila melanogaster are non-LTR retrotransposons similar to mammalian LINEs. They transpose at very high frequencies in the germ line of SF females resulting from crosses between reactive females, devoid of active I factors, and inducer males, containing active I factors. The vermilion marked IviP2 element was designed to allow easy phenotypical screening for retrotransposition events. It is deleted in ORF2 and therefore cannot produce reverse transcriptase. IviP2 can be mobilized at very low frequencies by actively transposing I factors in the germ line of SF females. This paper shows that IviP2 can be mobilized more efficiently in the germ line of strongly reactive females in the absence of active I factors, when it is trans-complemented by the product of ORF2 synthesized from the hsp70 heat-shock promoter. This represents a promising step toward the use of marked I elements to study retrotransposition and as tools for mutagenesis.

scholarly journals Field Measurements of Dielectric Absorption in Antarctic Ice and Snow at Very High Frequencies

1968 ◽  
Vol 7 (49) ◽  
pp. 89-94 ◽  
Author(s):  
M. E. R. Walford
Keyword(s):  
Impurity Content ◽  
Field Measurements ◽  
Relaxation Mechanism ◽  
Absorption Bands ◽  
High Frequencies ◽  
Dielectric Absorption ◽  
Antarctic Snow ◽  
Radio Frequencies ◽  
Very High Frequencies ◽  
Very High

AbstractField measurements are presented of dielectric absorption in Antarctic snow and ice at frequencies of a few hundred megahertz. They are compared with measurements by other authors at very high frequencies. The dielectric absorption in ice at these frequencies is accounted for in terms of absorption bands both at radio frequencies and in the infrared. Bands at radio frequencies are caused by a relaxation mechanism which depends upon the temperature and the impurity content of the ice. These two factors are therefore included in an account of the dielectric absorption in ice at very high frequencies.

Sign in / Sign up

Export Citation Format

Share Document