scholarly journals Facile Functionalization via Plasma-Enhanced Chemical Vapor Deposition for the Effective Filtration of Oily Aerosol

Polymers ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 1490 ◽  
Author(s):  
Sanghyun Roh ◽  
Sungmin Kim ◽  
Jooyoun Kim

With the growing concern about the health impacts associated with airborne particles, there is a pressing need to design an effective filter device. The objective of this study is to investigate the effect of plasma-based surface modifications on static charges of electrospun filter media and their resulting filtration performance. Polystyrene (PS) electrospun web (ES) had inherent static charges of ~3.7 kV due to its electric field-driven process, displaying effective filtration performance. When oxygen species were created on the surface by the oxygen plasma process, static charges of electret media decreased, deteriorating the filter performance. When the web surface was fluorinated by the plasma-enhanced chemical vapor deposition (PECVD), the filtration efficiency against oily aerosol significantly increased due to the combined effect of decreased wettability and strong static charges (~−3.9 kV). Solid particles on the charged media formed dendrites as particles were attracted to other layers of particles, building up a pressure drop. The PECVD process is suggested as a facile functionalization method for effective filter design, particularly for capturing oily aerosol.

RSC Advances ◽  
2014 ◽  
Vol 4 (56) ◽  
pp. 29866-29876 ◽  
Author(s):  
Anna Nasonova ◽  
Kyo-Seon Kim

Multifunctional particle coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD) and its application are presented in this review.


1995 ◽  
Vol 397 ◽  
Author(s):  
D. Bàuerle ◽  
E. Arenholz ◽  
N. Arnold ◽  
J. Heitz ◽  
P.B. Kargl

ABSTRACTThis paper gives an overview on different types of instabilities and structure formation in various fields of laser processing. Among the examples discussed in detail are non-coherent structures observed in laser-induced chemical vapor deposition (LCVD), in laser-induced surface modifications, and in laser ablation of polymers.


RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 18757-18761 ◽  
Author(s):  
Yanping Sui ◽  
Zhiying Chen ◽  
Yanhui Zhang ◽  
Shike Hu ◽  
Yijian Liang ◽  
...  

This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment.


Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  

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