scholarly journals Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

Sensors ◽  
2017 ◽  
Vol 17 (12) ◽  
pp. 2750 ◽  
Author(s):  
Nu Eom ◽  
Hong-Baek Cho ◽  
Yoseb Song ◽  
Woojin Lee ◽  
Tohru Sekino ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Gas Sensing

Decorated CNT based on porous silicon for hydrogen gas sensing at room temperature

RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44410-44414 ◽  
Author(s):  
Hamid Ghorbani Shiraz ◽  
Fatemeh Razi Astaraei ◽  
Somayeh Fardindoost ◽  
Zahra Sadat Hosseini
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Gas Sensing ◽  
Hydrogen Gas

A new triple-component sensor for detection of H2 was developed based on porous silicon and CNTs.

Fabrication and characterization of magnetic porous silicon with curie temperature above room temperature

2017 ◽  
Vol 24 (5) ◽  
pp. 1139-1144 ◽  
Author(s):  
Mansour Aouassa ◽  
Imen Jadli ◽  
Mohammad Ali Zrir ◽  
Hassen Maaref ◽  
Ridha Mghaieth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Curie Temperature ◽  
Room Temperature ◽  
Fabrication And Characterization

Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

2010 ◽  
Vol 663-665 ◽  
pp. 393-396
Author(s):  
Fu Ru Zhong ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Zinc Sulphide ◽  
Cvd Method ◽  
Peak Energy ◽  
Porous Silicon Substrate ◽  
Photoluminescence Peak ◽  
Scanning Electron

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

scholarly journals Characterization of CuO thin films for gas sensing applications

2019 ◽  
Vol 14 (31) ◽  
pp. 1-12
Author(s):  
Jamal M. Rzaij
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Cupric Oxide ◽  
Laser Pulses ◽  
X Ray Diffraction ◽  
Energy Increase ◽  
Nano Structure ◽  
X Ray ◽  
Sensing Applications

Nanostructural cupric oxide (CuO) films were prepared on Si and glass substrate by pulsed laser deposition technique (PLD) using laser Nd:YAG, using different laser pulses energies from 200 to 600 mJ. The X-ray diffraction pattern (XRD) of the films showed a polycrystalline structure with a monoclinic symmetry and preferred orientation toward (111) plane with nano structure. The crystallite size was increasing with increasing of laser pulse energy. Optical properties was characterized by using UV–vis spectrometer in the wave lengthrange (200-1100) nm at room temperature. The results showed that the transmission spectrum decreases with the laser pulses energy increase. Sensitivity of NO2 gas at different operating temperatures, (50°C, 100°C, 150°C and 200°C) was calculated.

Characterization of NO2 gas sensing for ZnO nanostructure grown hydrothermally on porous silicon

Optik ◽  
2021 ◽  
pp. 168300
Author(s):  
Shahad S. Khudiar ◽  
Uday M. Nayef ◽  
Falah A-H Mutlak ◽  
Sarah K. Abdulridha
Keyword(s):  
Porous Silicon ◽  
Gas Sensing ◽  
Zno Nanostructure

Electrophoretic Deposition of Nanostructured Zinc Oxide Film Sensitized with Palladium Chloride for Butane/Propane Gas Sensing

2015 ◽  
Vol 1131 ◽  
pp. 135-138
Author(s):  
Emmanuel A. Florido ◽  
Aniceto B. Maghirang
Keyword(s):  
Electrophoretic Deposition ◽  
Applied Voltage ◽  
Room Temperature ◽  
Gas Sensing ◽  
Graphite Substrate ◽  
Palladium Chloride ◽  
Zno Films ◽  
Optimum Number ◽  
Scanning Electron

Zinc oxide (ZnO) films on graphite substrate were fabricated using electrophoretic deposition (EPD) method. The effect of concentration and applied voltage in EPD were determined in which the mass of deposited ZnO depends on the applied voltage and not on the concentration. Sensitization of film with palladium chloride (PdCl2) was done through dipping method. The optimum number of dipping is 20. The sensitized samples were subjected to annealing at 100 °C for 30 minutes. The morphology of the films was analyzed through scanning electron microscopy (SEM) which showed the porosity and thickness of the samples. The IV characterization of the samples was done via four-point probe method and the resistivity and resistance were calculated. The resistivity and resistance were found to be lowest in graphite substrate while the films with palladium (Pd) showed lower values of resistivity and resistance than the films without palladium. . A three trial gas sensing experiment at room temperature was performed in which the response of the film to butane/propane gas (LPG) was tested and showed that it successfully sensed the gas. The sample with Pd deposited at the highest applied voltage showed the best gas response and response time among the other samples.Zinc Oxide (ZnO) films on graphite substrate were fabricated using Electrophoretic Deposition (EPD) method. The effect of concentration and applied voltage in EPD were determined in which the mass of deposited ZnO depends on the applied voltage and not on the concentration. Sensitization of film with Palladium Chloride (PdCl2) was done through dipping method. The optimum number of dipping is 20. The sensitized samples were subjected to annealing at 100 °C for 30 minutes. The morphology of the films was analyzed through Scanning Electron Microscopy (SEM) which showed the porosity and thickness of the samples. The IV characterization of the samples was done via four-point probe method and the resistivity and resistance were calculated. The resistivity and resistance was found to be lowest in graphite substrate while the films with palladium (Pd) showed lower values of resistivity and resistance than the films without palladium. . A three trial gas sensing experiment at room temperature was performed in which the sensitivity of the film to butane/propane gas (LPG) was tested and showed that it successfully sensed the gas. The sample with Pd deposited at the highest applied voltage showed the best sensitivity and response time among the other samples.

Raman and Optical Characterization of Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux ◽  
M. Dutita ◽  
J. Pamulapati ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Thermal Dissociation ◽  
Life Time ◽  
High Energy ◽  
Bulk Silicon ◽  
Energy Peak ◽  
Time Changes

ABSTRACTRaman spectra from electrochemically etched porous silicon are correlated with photoluminescence (PL) data from the same spots of the sample. This correlation is consistent with optical properties of quantum confinement. The dielectric constant determined from angle resolved ellipsometry gives values far below that of bulk silicon. This reduction is due to the combined effects of voids as well as quantum confinement. The PL spectrum shows a weak high energy peak around 2.8eV in addition to the strong broad peak at 1.5 to 1.9eV. The temperature dependence of PL resembles that of bound excitons such as Si:S, having a thermal dissociation energy of 100 meV near room temperature. The radiation life time changes from tens of microseconds near room temperature to a few milliseconds at liquid helium temperatures. The rapid increase in lifetime and decrease in PL intensity at low temperatures indicates that phonons are probably involved.

scholarly journals Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

2017 ◽  
Author(s):  
Nu Si A Eom ◽  
Hong-Baek Cho ◽  
Yoseb Song ◽  
Woojin Lee ◽  
Tohru Sekino ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Sensor ◽  
Room Temperature ◽  
Gas Sensing ◽  
Electrochemical Etching ◽  
Sensor Material ◽  
Sensing Mechanism ◽  
Si Substrates ◽  
H2 Sensor ◽  
P Type

In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect generated from the interface between the graphene and p-type silicon.

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