scholarly journals Amplitude Dependence of Resonance Frequency and its Consequences for Scanning Probe Microscopy

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4510 ◽  
Author(s):  
Omur E. Dagdeviren ◽  
Yoichi Miyahara ◽  
Aaron Mascaro ◽  
Tyler Enright ◽  
Peter Grütter

With recent advances in scanning probe microscopy (SPM), it is now routine to determine the atomic structure of surfaces and molecules while quantifying the local tip-sample interaction potentials. Such quantitative experiments using noncontact frequency modulation atomic force microscopy is based on the accurate measurement of the resonance frequency shift due to the tip-sample interaction. Here, we experimentally show that the resonance frequency of oscillating probes used for SPM experiments change systematically as a function of oscillation amplitude under typical operating conditions. This change in resonance frequency is not due to tip-sample interactions, but rather due to the cantilever strain or geometric effects and thus the resonance frequency is a function of the oscillation amplitude. Our numerical calculations demonstrate that the amplitude dependence of the resonance frequency is an additional yet overlooked systematic error source that can result in nonnegligible errors in measured interaction potentials and forces. Our experimental results and complementary numerical calculations reveal that the frequency shift due to this amplitude dependence needs to be corrected even for experiments with active oscillation amplitude control to be able to quantify the tip-sample interaction potentials and forces with milli-electron volt and pico-Newton resolutions.

Author(s):  
Yue Liu ◽  
Bingxue Yu ◽  
Hongli Wang ◽  
Kaiyang Zeng

The contact mode voltage modulated scanning probe microscopy (SPM) techniques, such as switching spectroscopy piezoresponse force microscope (SS-PFM), are powerful tools for detecting local electromechanical behaviors. However, interpreting their signals,...


2019 ◽  
Vol 90 (1) ◽  
pp. 013703 ◽  
Author(s):  
Omur E. Dagdeviren ◽  
Yoichi Miyahara ◽  
Aaron Mascaro ◽  
Peter Grütter

Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


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