scholarly journals Multi-Parameter Optimization of an InP Electro-Optic Modulator

Symmetry ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 1920
Author(s):  
Mikhail Stepanenko ◽  
Igor Yunusov ◽  
Vadim Arykov ◽  
Pavel Troyan ◽  
Yury Zhidik

In this article, a method for indium phosphide (InP) electro-optic modulator (EOM) optimization is introduced. The method can be used for the design and analysis of an EOM based on the Mach-Zehnder interferometer (MZI) design. This design is based on the division of the input optical signal into two optical paths and then, after processing, it combines the light into a single waveguide. The symmetry of the structure can provide state-of-the-art EOM characteristics with a push-pull control signal. Using a traveling wave electrode (TWE) design as a starting point, the authors varied the heterostructure design and optical waveguide parameters to obtain the optimal values of initial optical loss, evenness of the initial optical loss in the operating wavelength range, and the extinction ratio and length of the modulator arm. The key features of the proposed optimization method include the following: all independent input parameters are linked into a single system, where the relationship between the electrical and optical parameters of the modulator is realized; all physically realizable combinations of the input parameters are available for analysis; and EOM optimization is possible for one target parameter or for a group of target parameters. The results of the EOM optimization using the described method are presented.

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Song Feng ◽  
Lian-bi Li ◽  
Bin Xue

The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI) micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.


2011 ◽  
Vol 71-78 ◽  
pp. 1200-1203
Author(s):  
Kai Zhang ◽  
Yi Xin Zhang

During the measurement of a BOTDR system, it is significant to keep the extinction ratio of probe pulse uniform if constant sensing performance is desired. However the bias point of an electro-optic modulator (EOM) may slowly changes due to many external factors. Thus the variable bias point of the EOM must be stabilized. In this paper, a novel and simplified stabilization technique based on digital signal processor and step-by-step tracking algorithm is proposed. Contrast experiments with and without the stabilization are performed. The experimental results show that our method can lock the EOM’s bias point quite well and improve the sensing system’s performance obviously.


2003 ◽  
Vol 28 (16) ◽  
pp. 1418 ◽  
Author(s):  
Shahraam Afshar V. ◽  
Graham A. Ferrier ◽  
Xiaoyi Bao ◽  
Liang Chen

2013 ◽  
Vol 297 ◽  
pp. 48-54 ◽  
Author(s):  
Yuangang Lu ◽  
Yuguo Yao ◽  
Xiaodong Zhao ◽  
Feng Wang ◽  
Xuping Zhang

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 17-22 ◽  
Author(s):  
Volker J. Sorger ◽  
Norberto D. Lanzillotti-Kimura ◽  
Ren-Min Ma ◽  
Xiang Zhang

AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.


TAPPI Journal ◽  
2015 ◽  
Vol 14 (2) ◽  
pp. 119-129 ◽  
Author(s):  
VILJAMI MAAKALA ◽  
PASI MIIKKULAINEN

Capacities of the largest new recovery boilers are steadily rising, and there is every reason to expect this trend to continue. However, the furnace designs for these large boilers have not been optimized and, in general, are based on semiheuristic rules and experience with smaller boilers. We present a multiobjective optimization code suitable for diverse optimization tasks and use it to dimension a high-capacity recovery boiler furnace. The objective was to find the furnace dimensions (width, depth, and height) that optimize eight performance criteria while satisfying additional inequality constraints. The optimization procedure was carried out in a fully automatic manner by means of the code, which is based on a genetic algorithm optimization method and a radial basis function network surrogate model. The code was coupled with a recovery boiler furnace computational fluid dynamics model that was used to obtain performance information on the individual furnace designs considered. The optimization code found numerous furnace geometries that deliver better performance than the base design, which was taken as a starting point. We propose one of these as a better design for the high-capacity recovery boiler. In particular, the proposed design reduces the number of liquor particles landing on the walls by 37%, the average carbon monoxide (CO) content at nose level by 81%, and the regions of high CO content at nose level by 78% from the values obtained with the base design. We show that optimizing the furnace design can significantly improve recovery boiler performance.


2020 ◽  
Vol E103.C (11) ◽  
pp. 653-660
Author(s):  
Daichi FURUBAYASHI ◽  
Yuta KASHIWAGI ◽  
Takanori SATO ◽  
Tadashi KAWAI ◽  
Akira ENOKIHARA ◽  
...  

1990 ◽  
Vol 26 (1) ◽  
pp. 32-33 ◽  
Author(s):  
M.R.T. Tan ◽  
I. Kim ◽  
J. Chang ◽  
S.Y. Wang

2021 ◽  
Vol 11 (13) ◽  
pp. 5787
Author(s):  
Toan-Thang Vu ◽  
Thanh-Tung Vu ◽  
Van-Doanh Tran ◽  
Thanh-Dong Nguyen ◽  
Ngoc-Tam Bui

The measurement speed and measurement accuracy of a displacement measuring interferometer are key parameters. To verify these parameters, a fast and high-accuracy motion is required. However, the displacement induced by a mechanical actuator generates disadvantageous features, such as slow motion, hysteresis, distortion, and vibration. This paper proposes a new method for a nonmechanical high-speed motion using an electro-optic modulator (EOM). The method is based on the principle that all displacement measuring interferometers measure the phase change to calculate the displacement. This means that the EOM can be used to accurately generate phase change rather than a mechanical actuator. The proposed method is then validated by placing the EOM into an arm of a frequency modulation interferometer. By using two lock-in amplifiers, the phase change in an EOM and, hence, the corresponding virtual displacement could be measured by the interferometer. The measurement showed that the system could achieve a displacement at 20 kHz, a speed of 6.08 mm/s, and a displacement noise level < 100 pm//√Hz above 2 kHz. The proposed virtual displacement can be applied to determine both the measurement speed and accuracy of displacement measuring interferometers, such as homodyne interferometers, heterodyne interferometers, and frequency modulated interferometers.


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