Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high power transistors for linear applications

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high power transistors for switching applications

10.3403/00149923u ◽

2015 ◽

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Transistors

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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high power transistors for switching applications

10.3403/00149923 ◽

1972 ◽

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Transistors

Download Full-text

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high power transistors for linear applications

10.3403/00149895u ◽

2015 ◽

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Transistors

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

High Power ◽

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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System-In-Package Approach for Ultra-High-Power Semiconductor Devices

2006 International Conference on Electronic Materials and Packaging ◽

10.1109/emap.2006.4430564 ◽

2006 ◽

Author(s):

Jeffrey Chen

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Low Temperature Bonding Polycrystalline Diamond to Si by Using Au Thin-layer for High-power Semiconductor Devices

10.1109/icept52650.2021.9568004 ◽

2021 ◽

Author(s):

Yi Zhong ◽

Shuchao Bao ◽

Ke Li ◽

Mingchuan Zhang ◽

Daquan Yu

Keyword(s):

Low Temperature ◽

Thin Layer ◽

High Power ◽

Semiconductor Devices ◽

Polycrystalline Diamond ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Low Temperature Bonding

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High thermally conductive and electrically insulating 2D boron nitride nanosheet for efficient heat dissipation of high-power transistors

2D Materials ◽

10.1088/2053-1583/3/4/041009 ◽

2016 ◽

Vol 3 (4) ◽

pp. 041009 ◽

Cited By ~ 13

Author(s):

Ziyuan Lin ◽

Chunru Liu ◽

Yang Chai

Keyword(s):

Boron Nitride ◽

High Power ◽

Heat Dissipation ◽

Power Transistors ◽

Boron Nitride Nanosheet ◽

Thermally Conductive

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Active harmonic load-pull system for characterizing highly mismatched high power transistors

IEEE MTT-S International Microwave Symposium Digest, 2005. ◽

10.1109/mwsym.2005.1516920 ◽

2006 ◽

Cited By ~ 15

Author(s):

Z. Aboush ◽

J. Lees ◽

J. Benedikt ◽

P. Tasker

Keyword(s):

High Power ◽

Harmonic Load ◽

Pull System ◽

Power Transistors ◽

Load Pull ◽

Harmonic Load Pull

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(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

ECS Transactions ◽

10.1149/1.3631482 ◽

2019 ◽

Vol 41 (8) ◽

pp. 19-30 ◽

Cited By ~ 1

Author(s):

Matthew J. Marinella ◽

Stanley Atcitty ◽

Sandeepan DasGupta ◽

Robert J. Kaplar ◽

Mark A. Smith

Keyword(s):

High Power ◽

State Of The Art ◽

Semiconductor Devices ◽

Advanced Materials ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Current State

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Nonuniform RF Overstress in High-Power Transistors and Amplifiers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.916719 ◽

2008 ◽

Vol 55 (4) ◽

pp. 1067-1073

Author(s):

Alon Stopel ◽

Mark Leibovitch ◽

Yoram Shapira

Keyword(s):

High Power ◽

Power Transistors

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