scholarly journals In Situ Investigation of Dynamic Silver Crystallization Driven by Chemical Reaction and Diffusion

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-11
Author(s):  
Ting Liu ◽  
Xiangyu Dou ◽  
Yonghui Xu ◽  
Yongjun Chen ◽  
Yongsheng Han

Rational synthesis of materials is a long-term challenging issue due to the poor understanding on the formation mechanism of material structure and the limited capability in controlling nanoscale crystallization. The emergent in situ electron microscope provides an insight to this issue. By employing an in situ scanning electron microscope, silver crystallization is investigated in real time, in which a reversible crystallization is observed. To disclose this reversible crystallization, the radicals generated by the irradiation of electron beam are calculated. It is found that the concentrations of radicals are spatiotemporally variable in the liquid cell due to the diffusion and reaction of radicals. The fluctuation of the reductive hydrated electrons and the oxidative hydroxyl radicals in the cell leads to the alternative dominance of the reduction and oxidation reactions. The reduction leads to the growth of silver crystals while the oxidation leads to their dissolution, which results in the reversible silver crystallization. A regulation of radical distribution by electron dose rates leads to the formation of diverse silver structures, confirming the dominant role of local chemical concentration in the structure evolution of materials.

Micron ◽  
2018 ◽  
Vol 105 ◽  
pp. 30-34 ◽  
Author(s):  
Liming Liu ◽  
Honghang Wang ◽  
Zichuan Yi ◽  
Quanrong Deng ◽  
Zhidong Lin ◽  
...  

2005 ◽  
Vol 865 ◽  
Author(s):  
Hanne Scheel ◽  
Gerhard Frank ◽  
Niels Ott ◽  
Wolfram Witte ◽  
Horst P. Strunk

AbstractWe have equipped our transmission electron microscope (accelerating voltage up to 300 kV) with a cathodoluminescence (CL) system that covers a wavelength range of 180 — 1800 nm and temperatures from 10 K upwards. This contribution shows how this system can be utilized to study the initial damage process due to electron irradiation in Cu(In,Ga)Se2 thin solar films. This damage leads essentially to atomic defects that cannot structurally be imaged in the transmission electron microscope, but influence the luminescence spectra. We analyse in-situ the spectral evolutions with electron dose of Cu(In1-xGax)Se2 with [Ga]/([Ga]+[In]) ratio x ranging from x=0 to x=1 and interpret the defect formation kinetics with a first model. The obtained results indicate that the films with equal Ga and In concentration are the least radiation sensitive. The voltage dependence of the damage rate indicates that the damage arises essentially due to displacement by electron knock-on (in the voltage range 150 — 300 kV).


2018 ◽  
Vol 193 ◽  
pp. 151-158 ◽  
Author(s):  
A. Aretz ◽  
L. Ehle ◽  
A. Haeusler ◽  
K. Bobzin ◽  
M. Öte ◽  
...  

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