The effect of TiO2 buffer layer thickness on the thermochromic properties of VO2 thin-film fabricated by high density plasma source

2020 ◽  
Vol 60 (SA) ◽  
pp. SAAB04
Author(s):  
Kuei-Chih Lin ◽  
Cheng-Li Lin ◽  
Chen-An Tsai ◽  
Pi-Chun Juan
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Plasma Source ◽  
High Density ◽  
Thermochromic Properties ◽  
Buffer Layer Thickness ◽  
Tio2 Buffer Layer ◽  
Density Plasma

scholarly journals Constraint Effects on Thin Film Channel Cracking Behavior

2005 ◽  
Vol 20 (9) ◽  
pp. 2266-2273 ◽  
Author(s):  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Joost J. Vlassak
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Silicon Substrate ◽  
Shear Lag ◽  
Shear Lag Model ◽  
Lag Model ◽  
Buffer Layer Thickness ◽  
Cds Film

One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film. The results show that channel cracking is enhanced if the buffer layer is more compliant than the silicon substrate. Crack velocity increases with increasing buffer layer thickness and decreasing buffer layer stiffness. This is caused by a reduction of the constraint imposed by the substrate on the film and a commensurate increase in energy release rate. The degree of constraint is characterized experimentally as a function of buffer layer thickness and stiffness, and compared to the results of a simple shear lag model that was proposed previously. The results show that the shear lag model does not accurately predict the effect of the buffer layer.

Effect of Buffer Layer Thickness on the Growth Properties of Hydrothermally Grown ZnO Nanorods

2011 ◽  
Vol 11 (2) ◽  
pp. 1409-1412 ◽  
Author(s):  
Ah Ra Kim ◽  
Ju-Young Lee ◽  
Bo Ra Jang ◽  
Hong Seung Kim ◽  
Young Ji Cho ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Nanorods ◽  
Growth Properties ◽  
Buffer Layer Thickness

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

2010 ◽  
Vol 19 (3) ◽  
pp. 036801 ◽  
Author(s):  
Wu Yu-Xin ◽  
Zhu Jian-Jun ◽  
Chen Gui-Feng ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Structural Properties ◽  
Buffer Layer Thickness ◽  
Aln Buffer
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