Impact of the positive electron-hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN

2021 ◽  
Author(s):  
Ryota Ishii ◽  
Akira Yoshikawa ◽  
Hirotsugu Kobayashi ◽  
Mitsuru FUNATO ◽  
Yoichi KAWAKAMI
Keyword(s):  
Binding Energy ◽  
Exchange Interaction ◽  
Interaction Constant ◽  
Electron Hole ◽  
Neutral Donor

Excitonic quasimolecules containing of two quantum dots

2016 ◽  
pp. 4024-4028 ◽  
Author(s):  
Sergey I. Pokutnyi ◽  
Wlodzimierz Salejda
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exchange Interaction ◽  
Coulomb Interaction ◽  
Silicate Glass ◽  
Glass Matrix ◽  
Silicate Glass Matrix

The possibility of occurrence of the excitonic  quasimolecule formed of spatially separated electrons and holes in a nanosystem that consists  of  CuO quantum dots synthesized in a silicate glass matrix. It is shown that the major contribution to the excitonic quasimolecule binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes.

Effect of Electron–Hole Overlap and Exchange Interaction on Exciton Radiative Lifetimes of CdTe/CdSe Heteronanocrystals

ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 4102-4110 ◽  
Author(s):  
Andrés Granados del Águila ◽  
Esther Groeneveld ◽  
Jan C. Maan ◽  
Celso de Mello Donegá ◽  
Peter C. M. Christianen
Keyword(s):  
Exchange Interaction ◽  
Electron Hole ◽  
Radiative Lifetimes

Electron-Hole Exchange Interaction in Quantum Wells

1988 ◽  
pp. 200-203 ◽  
Author(s):  
Y. Chen ◽  
B. Gil ◽  
P. Lefebvre ◽  
H. Mathieu ◽  
T. Fukunaga ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exchange Interaction ◽  
Electron Hole

scholarly journals Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
C. Guénaud ◽  
E. Deleporte ◽  
M. Voos ◽  
C. Delalande ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Thin Layers ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Yellow Band ◽  
Neutral Donor ◽  
Photoluminescence Line ◽  
Temperature Dependent Photoluminescence

We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have been obtained. We show that, at low temperature, the fundamental A excitons are preferentially involved in the relaxation towards the neutral donor bound exciton photoluminescence line, while electron-hole pairs rather participate in the relaxation towards D0−A0 emission and the yellow band. The relaxation from the A exciton towards the yellow band and D0−A0 emission is made easier by temperature. The band structure of the GaN layers has been determined from temperature dependent photoluminescence excitation spectroscopy: A and C excitons and A continuum band gap have been identified up to 210K.

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

Sign in / Sign up

Export Citation Format

Share Document