scholarly journals Design of Lithium Niobate Mems Resonator

This paper reports on stress and displacement of the resonator’s nodes. The search of the resonator’s frequency is examined by using Lithium niobate (LiNbO3) as the resonator’s major component material. By using the lithium niobate as a major component it makes a partial changes in stress and displacement of a resonator. The theoretical details of stress and displacement are given for respective eigen frequency. The line graph for the stress and displacement on the X and Y axis is examined by using the comsol software. The design of resonator by using the software makes easy to rectify the technical errors, before going to create a hardware product. For example the acoustic resonator’s are used to reduce the noise in the automobile industries with the use of muffler. The resonator used for reducing the noise can be designed initially with the software such that the design clarity will be noticed. This report based on resonator design using lithium niobate(LiNbO3), other then lithium niobate materials like silicon can also be used but in this project lithium niobate is used as the major component because it is prepared by using lithium(Li), niobium(Nb), oxygen(O2) which is not directly present in nature.

2021 ◽  
Author(s):  
AKHILESH PANDEY ◽  
Shankar Dutta ◽  
Nidhi Gupta ◽  
Davinder Kaur ◽  
R. Raman

Abstract Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.


Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 149
Author(s):  
Savannah R. Eisner ◽  
Cailin A. Chapin ◽  
Ruochen Lu ◽  
Yansong Yang ◽  
Songbin Gong ◽  
...  

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.


2018 ◽  
Vol 27 (4) ◽  
pp. 602-604 ◽  
Author(s):  
Luca Colombo ◽  
Abhay Kochhar ◽  
Gabriel Vidal-Alvarez ◽  
Gianluca Piazza

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 342 ◽  
Author(s):  
Huangpu Han ◽  
Bingxi Xiang ◽  
Jiali Zhang

The single-mode microring resonators on lithium niobate thin films were designed and simulated using 2.5-D variational finite difference time domain mode simulations from Lumerical mode Solutions. The single-mode conditions and the propagation losses of lithium niobate planar waveguide with different SiO2 cladding layer thicknesses were studied and compared systematically. The optimization of design parameters such as radii of microrings and gap sizes between channel and ring waveguides were determined. The key issues affecting the resonator design such as free spectral range and Quality Factor were discussed. The microring resonators had radius R = 20 μm, and their transmission spectrum had been tuned using the electro-optical effect.


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