scholarly journals Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices

2021 ◽  
Author(s):  
Maximillian Holliday ◽  
Thomas Heuser ◽  
Zachary Manchester ◽  
Debbie Senesky
Keyword(s):  
Total Dose ◽  
Real Time ◽  
Experimental Testing ◽  
Semiconductor Devices ◽  
Radiation Environment ◽  
Electronic Systems ◽  
Dynamic Biasing

This work proposes a "dynamic biasing" technique and uses on-orbit simulations with experimental testing to demonstrate up to a 16x improvement in total-dose lifetimes for COTS devices without additional shielding or modifications to the chip. Building upon this foundation, the dynamic biasing technique offers a unique opportunity for microelectronic systems to begin intelligently responding in real-time to their radiation environment. We believe this fundamental technique can become an integral tool to countless future electronic systems in space.<br>

scholarly journals Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices

2021 ◽  
Author(s):  
Maximillian Holliday ◽  
Thomas Heuser ◽  
Zachary Manchester ◽  
Debbie Senesky
Keyword(s):  
Total Dose ◽  
Real Time ◽  
Experimental Testing ◽  
Semiconductor Devices ◽  
Radiation Environment ◽  
Electronic Systems ◽  
Dynamic Biasing

This work proposes a "dynamic biasing" technique and uses on-orbit simulations with experimental testing to demonstrate up to a 16x improvement in total-dose lifetimes for COTS devices without additional shielding or modifications to the chip. Building upon this foundation, the dynamic biasing technique offers a unique opportunity for microelectronic systems to begin intelligently responding in real-time to their radiation environment. We believe this fundamental technique can become an integral tool to countless future electronic systems in space.<br>

scholarly journals Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

2021 ◽  
Author(s):  
Maximillian Holliday ◽  
Thomas Heuser ◽  
Zachary Manchester ◽  
Debbie Senesky
Keyword(s):  
Total Dose ◽  
Integrated Circuit ◽  
Circuit Complexity ◽  
Low Earth Orbit ◽  
Radiation Environment ◽  
Space Applications ◽  
Spacecraft Design ◽  
Dose Accumulation ◽  
Processor Performance ◽  
Dynamic Biasing

The survivability of microelectronic devices in ionizing radiation environments drives spacecraft design, capability, mission scope, and cost. This work exploits the periodic nature of many space radiation environments to extend device lifetimes without additional shielding or modifications to the semiconductor architecture. We propose a technique for improving component lifetimes through reduced total-dose accumulation by modulating device bias during periods of intense irradiation. Simulation of this ``dynamic biasing" technique applied to single-transistor devices in a typical low-Earth orbit results in an increase of component life from 114 days to 477 days (318% improvement) at the expense of 5% down time (95% duty cycle). The biasing technique is also experimentally demonstrated using gamma radiation to study three commercial devices spanning a range of integrated circuit complexity in 109 rad/min and 256 rad/min dose rate conditions. The demonstrated improvements in device lifetimes using the proposed dynamic biasing technique lays a foundation for more effective use of modern microelectronics for space applications. Analogous to the role real-time temperature monitoring plays in maximizing modern processor performance, the proposed dynamic biasing technique is a means of intelligently responding to the radiation environment and capable of becoming an integral tool in optimizing component lifetimes in space.

Low-Cost High-Speed Techniques for Real-Time Simulation of Power Electronic Systems

2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani
Keyword(s):  
Real Time ◽  
High Speed ◽  
Low Cost ◽  
Electronic Systems ◽  
Power Electronic ◽  
Real Time Simulation ◽  
Time Simulation

On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

2014 ◽  
Vol 1016 ◽  
pp. 521-525 ◽  
Author(s):  
V.V. Shurenkov
Keyword(s):  
Microwave Radiation ◽  
Main Part ◽  
Physical Mechanism ◽  
Semiconductor Devices ◽  
Microwave Devices ◽  
Electronic Systems ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Power Microwave ◽  
Forbidden Gap

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

scholarly journals Damage detection in laminar thermoplastic composite materials by means of embedded optical fibers

2006 ◽  
Vol 60 (7-8) ◽  
pp. 176-179
Author(s):  
Aleksandar Kojovic ◽  
Irena Zivkovic ◽  
Ljiljana Brajovic ◽  
Dragan Mitrakovic ◽  
Radoslav Aleksic
Keyword(s):  
Composite Materials ◽  
Optical Fiber ◽  
Real Time ◽  
Optical Fibers ◽  
Impact Damage ◽  
Experimental Testing ◽  
Low Energy ◽  
Thermoplastic Composite ◽  
Woven Fabric ◽  
The Impact

This paper investigates the possibility of applying optical fibers as sensors for investigating low energy impact damage in laminar thermoplastic composite materials, in real time. Impact toughness testing by a Charpy impact pendulum with different loads was conducted in order to determine the method for comparative measurement of the resulting damage in the material. For that purpose intensity-based optical fibers were built in to specimens of composite materials with Kevlar 129 (the DuPont registered trade-mark for poly(p-phenylene terephthalamide)) woven fabric as reinforcement and thermoplastic PVB (poly(vinyl butyral)) as the matrix. In some specimens part of the layers of Kevlar was replaced with metal mesh (50% or 33% of the layers). Experimental testing was conducted in order to observe and analyze the response of the material under multiple low-energy impacts. Light from the light-emitting diode (LED) was launched to the embedded optical fiber and was propagated to the phototransistor-based photo detector. During each impact, the signal level, which is proportional to the light intensity in the optical fiber, drops and then slowly recovers. The obtained signals were analyzed to determine the appropriate method for real time damage monitoring. The major part of the damage occurs during impact. The damage reflects as a local, temporary release of strain in the optical fiber and an increase of the signal level. The obtained results show that intensity-based optical fibers could be used for measuring the damage in laminar thermoplastic composite materials. The acquired optical fiber signals depend on the type of material, but the same set of rules (relatively different, depending on the type of material) could be specified. Using real time measurement of the signal during impact and appropriate analysis enables quantitative evaluation of the impact damage in the material. Existing methods in most cases use just the intensity of the signal before and after the impact, as the measure of damage. This method could be used to monitor the damage in real time, giving warnings before fatal damage occurs.

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