Characteristics of Vanadium Oxide Grown by Atomic Layer Deposition for Hole Carrier Selective Contacts Si Solar Cells

2020 ◽  
Vol 30 (12) ◽  
pp. 660-665 ◽  
Author(s):  
Jihye Park ◽  
Hyo Sik Chang
2019 ◽  
Vol 3 (6) ◽  
pp. 1517-1525 ◽  
Author(s):  
James A. Raiford ◽  
Rebecca A. Belisle ◽  
Kevin A. Bush ◽  
Rohit Prasanna ◽  
Axel F. Palmstrom ◽  
...  

ALD vanadium oxide and a low-absorbing hole transport material (HTM) enable semi-transparent perovskite solar cells with high photocurrent and thermal stability.


2014 ◽  
Vol 53 (8S1) ◽  
pp. 08LC04 ◽  
Author(s):  
Meng Li ◽  
Hong-Sik Shin ◽  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Horyeong Lee ◽  
...  

2012 ◽  
Vol 187 ◽  
pp. 357-361 ◽  
Author(s):  
Bart Vermang ◽  
Aude Rothschild ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
Twan Bearda ◽  
...  

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.


Author(s):  
А.В. Уваров ◽  
А.И. Баранов ◽  
Е.А. Вячеславова ◽  
Н.А. Калюжный ◽  
Д.А. Кудряшов ◽  
...  

The possibility of creating a lower junction of multijunction A3B5/Si solar cells based on an n-GaP/p-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature (Ts) not exceeding 650 °C. Photoelectric properties of structures grown at 650 °C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.


2011 ◽  
Vol 8 ◽  
pp. 301-306 ◽  
Author(s):  
Florian Werner ◽  
Walter Stals ◽  
Roger Görtzen ◽  
Boris Veith ◽  
Rolf Brendel ◽  
...  

Solar RRL ◽  
2021 ◽  
pp. 2100181
Author(s):  
Yali Sun ◽  
Pengfei Qiu ◽  
Siyu Wang ◽  
Hongling Guo ◽  
Rutao Meng ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


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