Electrical and chemical characterization of Al<inf>2</inf>O<inf>3</inf> passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells

The perovskite solar cells (PSCs) with Al2O3 passivation layer were fabricated and characterized. The PSC have some advantages of easier and cheaper fabrication process than that of conventional Si solar cells, III-V compound semiconductor solar cells, and organic solar cells. The perovskite light harvester, CH3NH3PbI3, was deposited by vapor deposition on [compact TiO2 / F-doped tin oxide (FTO) / glass]. The advantage of vapor deposition over solution process is expected to be able to offer the thin film with smoother surface over larger area. Then, Al2O3 passivation layer was deposited by atomic layer deposition (ALD) on the CH3NH3PbI3 light harvester. Al2O3 passivation layer was expected to prevent the CH3NH3PbI3 light harvester from oxidation and improve the solar cell efficiency, and ALD has been one of the most effective methods to deposit Al2O3 thin film for last 25 years. The atomic layer deposited Al2O3 layer thickness was optimized from the solar cell characterization. The optimized power conversion efficiency (PCE) and Al2O3 thickness were ~8.0 % and ~10.0 nm, respectively.

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Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.187.357 ◽

2012 ◽

Vol 187 ◽

pp. 357-361 ◽

Cited By ~ 2

Author(s):

Bart Vermang ◽

Aude Rothschild ◽

Karine Kenis ◽

Kurt Wostyn ◽

Twan Bearda ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Surface Passivation ◽

Atomic Layer ◽

Surface Cleaning ◽

Hydrophilic Surface ◽

Hot Air ◽

Si Solar Cells ◽

Layer Deposition ◽

P Type

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.

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Characteristics of Vanadium Oxide Grown by Atomic Layer Deposition for Hole Carrier Selective Contacts Si Solar Cells

Korean Journal of Materials Research ◽

10.3740/mrsk.2020.30.12.660 ◽

2020 ◽

Vol 30 (12) ◽

pp. 660-665 ◽

Cited By ~ 1

Author(s):

Jihye Park ◽

Hyo Sik Chang

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Vanadium Oxide ◽

Atomic Layer ◽

Si Solar Cells ◽

Layer Deposition

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Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

Письма в журнал технической физики ◽

10.21883/pjtf.2021.14.51189.18781 ◽

2021 ◽

Vol 47 (14) ◽

pp. 51

Author(s):

А.В. Уваров ◽

А.И. Баранов ◽

Е.А. Вячеславова ◽

Н.А. Калюжный ◽

Д.А. Кудряшов ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Vapor Phase ◽

Atomic Layer ◽

Organic Vapor ◽

Photoelectric Properties ◽

Si Solar Cells ◽

Layer Deposition ◽

Additional Processing ◽

Metal Organic

The possibility of creating a lower junction of multijunction A3B5/Si solar cells based on an n-GaP/p-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature (Ts) not exceeding 650 °C. Photoelectric properties of structures grown at 650 °C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.

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