Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

The possibility of creating a lower junction of multijunction A3B5/Si solar cells based on an n-GaP/p-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature (Ts) not exceeding 650 °C. Photoelectric properties of structures grown at 650 °C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.

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Combining nanoparticles grown by ALD and MOFs for gas separation and catalysis applications

Pure and Applied Chemistry ◽

10.1515/pac-2019-0109 ◽

2020 ◽

Vol 92 (2) ◽

pp. 213-222 ◽

Cited By ~ 4

Author(s):

Matthieu Weber ◽

Mikhael Bechelany

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Gas Separation ◽

Vapor Phase ◽

Metallic Nanoparticles ◽

Metal Organic Frameworks ◽

Atomic Layer ◽

Chemical Processes ◽

Layer Deposition ◽

Metal Organic

AbstractSupported metallic nanoparticles (NPs) are essential for many important chemical processes. In order to implement precisely tuned NPs in miniaturized devices by compatible processes, novel nanoengineering routes must be explored. Atomic layer deposition (ALD), a scalable vapor phase technology typically used for the deposition of thin films, represents a promising new route for the synthesis of supported metallic NPs. Metal–organic frameworks (MOFs) are a new exciting class of crystalline porous materials that have attracted much attention in the recent years. Since the size of their pores can be precisely adjusted, these nanomaterials permit highly selective separation and catalytic processes. The combination of NPs and MOF is an emerging area opening numbers of applications, which still faces considerable challenges, and new routes need to be explored for the synthesis of these NPs/MOF nanocomposites. The aim of this paper is double: first, it aims to briefly present the ALD route and its use for the synthesis of metallic NPs. Second, the combination of ALD-grown NPs and MOFs has been explored for the synthesis of Pd NPs/MOF ZIF-8, and several selected examples were ALD-grown NPs and MOFs have been combined and applied gas separation and catalysis will be presented.

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Vapor-Phase Metalation by Atomic Layer Deposition in a Metal–Organic Framework

Journal of the American Chemical Society ◽

10.1021/ja4050828 ◽

2013 ◽

Vol 135 (28) ◽

pp. 10294-10297 ◽

Cited By ~ 538

Author(s):

Joseph E. Mondloch ◽

Wojciech Bury ◽

David Fairen-Jimenez ◽

Stephanie Kwon ◽

Erica J. DeMarco ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Vapor Phase ◽

Metal Organic Framework ◽

Atomic Layer ◽

Layer Deposition ◽

Metal Organic ◽

Organic Framework

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Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3for passivation of crystal Si solar cells

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.08lc04 ◽

2014 ◽

Vol 53 (8S1) ◽

pp. 08LC04 ◽

Cited By ~ 1

Author(s):

Meng Li ◽

Hong-Sik Shin ◽

Kwang-Seok Jeong ◽

Sung-Kwen Oh ◽

Horyeong Lee ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Surface Pretreatment ◽

Si Solar Cells ◽

Layer Deposition ◽

Effect Of Surface

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Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.187.357 ◽

2012 ◽

Vol 187 ◽

pp. 357-361 ◽

Cited By ~ 2

Author(s):

Bart Vermang ◽

Aude Rothschild ◽

Karine Kenis ◽

Kurt Wostyn ◽

Twan Bearda ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Surface Passivation ◽

Atomic Layer ◽

Surface Cleaning ◽

Hydrophilic Surface ◽

Hot Air ◽

Si Solar Cells ◽

Layer Deposition ◽

P Type

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.

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