scholarly journals Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

2016 ◽  
Vol 7 ◽  
pp. 75-80 ◽  
Author(s):  
Kuang-Yang Kou ◽  
Yu-En Huang ◽  
Chien-Hsun Chen ◽  
Shih-Wei Feng

The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses used for thin film, solar cell applications is investigated. The residual strain induced by the lattice mismatch and the difference in the thermal expansion coefficient for thicker ZnO@B is relaxed, leading to an increased surface texture, stronger absorbance, larger grain size, and lower sheet resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer.

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NB12 ◽  
Author(s):  
Sun Ho Kim ◽  
Dong Joo You ◽  
Jin Hee Park ◽  
Sung Eun Lee ◽  
Heon-Min Lee ◽  
...  

2012 ◽  
Vol 51 ◽  
pp. 10NB12
Author(s):  
Sun Ho Kim ◽  
Dong Joo You ◽  
Jin Hee Park ◽  
Sung Eun Lee ◽  
Heon-Min Lee ◽  
...  

Author(s):  
Nafis Ahmed ◽  
Arokiyadoss Rayerfrancis ◽  
P. Balaji Bhargav ◽  
Balaji C ◽  
P. Ramasamy

Al-doped ZnO (AZO) thin films are deposited using dc magnetron sputtering and the process conditions are optimized to obtain TCE with desirable properties suitable for photovoltaic applications. In the course, the effects of deposition parameters such as growth temperature, deposition time and plasma power density on the structural and optoelectronic properties were investigated using suitable characterization techniques. XRD analysis of the deposited films at different process conditions showed a strong c-axis preferred orientation. The surface roughness of the deposited films was examined using AFM analysis. Elemental analysis was carried out using XPS. The resistivity and sheet resistance of the thin films decreased with increase in temperature, deposition time and power density. The optimized films deposited at 250°C resulted in electrical resistivity of 6.23 x10-4 Ωcm, sheet resistance of 9.2 Ω/□ and exhibited an optical transmittance of >85% in the visible range. FOM calculations were carried out to analyze the suitability of deposited thinfilms for thin film amorphous silicon solar cell applications. The photo gain of optimized intrinsic a-Si:H layer was in the range of 104, whereas no photo gain was observed in doped a-Si:H layers. The thin film solar cell fabricated using the optimized AZO film as TCE exhibited power conversion efficiency of 6.24% when measured at AM 1.5 condition.


2010 ◽  
Vol 56 (2) ◽  
pp. 571-575
Author(s):  
Taeyoun Kim ◽  
Jeong Woo Lee ◽  
Won Seo Park ◽  
Seong-Kee Park ◽  
Ki Yong Kim ◽  
...  

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