Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures. An increase in the thickness of the GaAs barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the GaAs barrier layers on the structural and optical properties of the InAs/GaAs heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in GaAs decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

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Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.284.182 ◽

2018 ◽

Vol 284 ◽

pp. 182-187

Author(s):

E.E. Blokhin ◽

D.A. Arustamyan ◽

L.M. Goncharova

Keyword(s):

Quantum Dots ◽

High Speed ◽

Ion Beam ◽

Inas Quantum Dots ◽

Potential Barriers ◽

Near Ir ◽

Current Voltage ◽

Ir Photodetectors ◽

Current Voltage Characteristics ◽

Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

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A study of photosensitive InAs/GaAs heterostructures with quantum dots grown by ion-beam deposition

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451011060127 ◽

2011 ◽

Vol 5 (3) ◽

pp. 559-562 ◽

Cited By ~ 12

Author(s):

L. S. Lunin ◽

I. A. Sysoev ◽

D. L. Alfimova ◽

S. N. Chebotarev ◽

A. S. Pashchenko

Keyword(s):

Quantum Dots ◽

Ion Beam ◽

Ion Beam Deposition ◽

Beam Deposition

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Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

Физика и техника полупроводников ◽

10.21883/ftp.2018.06.45919.8635 ◽

2018 ◽

Vol 52 (6) ◽

pp. 581

Author(s):

А.С. Пащенко ◽

Л.С. Лунин ◽

С.Н. Чеботарев ◽

М.Л. Лунина

Keyword(s):

Quantum Dots ◽

Emission Peak ◽

Structural And Optical Properties ◽

Inas Quantum Dots ◽

Force Microscopy ◽

Potential Barriers ◽

Atomic Force ◽

Gaas Barrier ◽

Gaas Quantum Dot ◽

Crystal Lattice Parameters

AbstractThe influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10^10 to 0.93 × 10^10 cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.

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Ion Beam Deposition of Quantum Dots from Colloidal Solution

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2977 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2977-2981 ◽

Cited By ~ 4

Author(s):

Yuki Tani ◽

Satoshi Kobayashi ◽

Hiroshi Kawazoe

Keyword(s):

Quantum Dots ◽

Colloidal Solution ◽

Ion Beam ◽

Ion Beam Deposition ◽

Beam Deposition

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Ion Beam Deposition of Quantum Dots from Colloidal Solution

10.7567/ssdm.2007.p-7-7 ◽

2007 ◽

Author(s):

Yuki Tani ◽

Satoshi Kobayashi ◽

Hiroshi Kawazoe

Keyword(s):

Quantum Dots ◽

Colloidal Solution ◽

Ion Beam ◽

Ion Beam Deposition ◽

Beam Deposition

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Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.8.2 ◽

2017 ◽

Vol 8 ◽

pp. 12-20 ◽

Cited By ~ 10

Author(s):

Sergei N Chebotarev ◽

Alexander S Pashchenko ◽

Leonid S Lunin ◽

Elena N Zhivotova ◽

Georgy A Erimeev ◽

...

Keyword(s):

Quantum Dots ◽

Ion Beam ◽

Beam Current ◽

Growth Direction ◽

Ion Beam Sputtering ◽

Inas Quantum Dots ◽

Spacer Layer ◽

Gaas Barrier ◽

Beam Sputtering ◽

Impurity Doping

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

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Electron energy loss spectroscopy of diamond-like carbon thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130997 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1272-1273

Author(s):

J. Kulik ◽

Y. Lifshitz ◽

G.D. Lempert ◽

S. Rotter ◽

J.W. Rabalais ◽

...

Keyword(s):

Thin Films ◽

Energy Loss ◽

Electron Energy ◽

Ion Beam ◽

Diamond Like Carbon ◽

Ion Beam Deposition ◽

Chemistry Research ◽

Carbon Thin Films ◽

Electron Energy Loss ◽

Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

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