Application of Laser Lift-off Technique in Flexible Electronics Manufacturing

2020 ◽  
Vol 47 (1) ◽  
pp. 0100001
Author(s):  
季凌飞 Ji Lingfei ◽  
马瑞 Ma Rui ◽  
张熙民 Zhang Ximin ◽  
孙正阳 Sun Zhengyang ◽  
李鑫 Li Xin
2014 ◽  
Vol 26 (44) ◽  
pp. 7418-7418
Author(s):  
Seungjun Kim ◽  
Jung Hwan Son ◽  
Seung Hyun Lee ◽  
Byoung Kuk You ◽  
Kwi-Il Park ◽  
...  

Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 546
Author(s):  
Seong Hyun Jang ◽  
Young Joon Han ◽  
Sang Yoon Lee ◽  
Geonho Lee ◽  
Jae Woong Jung ◽  
...  

Lift-off is one of the last steps in the production of next-generation flexible electronics. It is important that this step is completed quickly to prevent damage to ultrathin manufactured electronics. This study investigated the chemical structure of polyimide most suitable for the Xe Flash lamp–Lift-Off process, a next-generation lift-off technology that will replace the current dominant laser lift-off process. Based on the characteristics of the peeled-off polyimide films, the Xe Flash lamp based lift-off mechanism was identified as photothermal decomposition. This occurs by thermal conduction via light-to-heat conversion. The synthesized polyimide films treated with the Xe Flash lamp–Lift-Off process exhibited various thermal, optical, dielectric, and surface characteristics depending on their chemical structures. The polyimide molecules with high concentrations of –CF3 functional groups and kinked chemical structures demonstrated the most promising peeling properties, optical transparencies, and dielectric constants. In particular, an ultra-thin polyimide substrate (6 μm) was successfully fabricated and showed potential for use in next-generation flexible electronics.


Micromachines ◽  
2020 ◽  
Vol 11 (11) ◽  
pp. 953
Author(s):  
Sang Il Lee ◽  
Seong Hyun Jang ◽  
Young Joon Han ◽  
Jun yeub Lee ◽  
Jun Choi ◽  
...  

This study experimentally investigated process mechanisms and characteristics of newly developed xenon flash lamp lift-off (XF-LO) technology, a novel thin film lift-off method using a light to heat conversion layer (LTHC) and a xenon flash lamp (XFL). XF-LO technology was used to lift-off polyimide (PI) films of 8.68–19.6 μm thickness. When XFL energy irradiated to the LTHC was 2.61 J/cm2, the PI film was completely released from the carrier substrate. However, as the energy intensity of the XFL increased, it became increasingly difficult to completely release the PI film from the carrier substrate. Using thermal gravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR) and transmittance analysis, the process mechanism of XF-LO technology was investigated. Thermal durability of the PI film was found to deteriorate with increasing XFL energy intensity, resulting in structural deformation and increased roughness of the PI film surface. The optimum energy intensity of 2.61 J/cm2 or less was found to be effective for performing XF-LO technology. This study provides an attractive method for manufacturing flexible electronic boards outside the framework of existing laser lift-off (LLO) technology.


2017 ◽  
Vol 29 (33) ◽  
pp. 1702411 ◽  
Author(s):  
Lvkang Shen ◽  
Liang Wu ◽  
Quan Sheng ◽  
Chunrui Ma ◽  
Yong Zhang ◽  
...  

2018 ◽  
Vol 62 (2) ◽  
pp. 233-242 ◽  
Author(s):  
Jing Bian ◽  
LaoBoYang Zhou ◽  
XiaoDong Wan ◽  
MinXiao Liu ◽  
Chen Zhu ◽  
...  

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Cheng-Wei Cheng ◽  
Kuen-Ting Shiu ◽  
Ning Li ◽  
Shu-Jen Han ◽  
Leathen Shi ◽  
...  

Science ◽  
2017 ◽  
Vol 355 (6330) ◽  
pp. 1203-1206 ◽  
Author(s):  
Naveen K. Mahenderkar ◽  
Qingzhi Chen ◽  
Ying-Chau Liu ◽  
Alexander R. Duchild ◽  
Seth Hofheins ◽  
...  

2020 ◽  
Vol 499 ◽  
pp. 143910 ◽  
Author(s):  
Jing Bian ◽  
Laoboyang Zhou ◽  
Biao Yang ◽  
Zhouping Yin ◽  
YongAn Huang

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