Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Author(s):  
Silvia L. Fernandes ◽  
Lucas J. Affonço ◽  
Roberto A. R. Junior ◽  
José H. D. da Silva ◽  
Elson Longo ◽  
...  
2022 ◽  
Vol 40 (1) ◽  
pp. 013405
Author(s):  
Nilton Francelosi A. Neto ◽  
Cristiane Stegemann ◽  
Lucas J. Affonço ◽  
Douglas M. G. Leite ◽  
José H. D. da Silva

2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.


2019 ◽  
Vol 1281 ◽  
pp. 012019
Author(s):  
N V Gavrilov ◽  
A S Kamenetskikh ◽  
P V Tretnikov ◽  
A V Chukin ◽  
A I Men’shakov

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